⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1719704 | 0.95 | LMNA (0.38) | — | |
| SCHEMBL11330423 | 0.84 | — | — | |
| SCHEMBL1720393 | 0.82 | — | — | |
| SCHEMBL1720385 | 0.82 | CYP1A2 (0.39) | — | |
| SCHEMBL410349 | 0.82 | — | — | |
| SCHEMBL14363062 | 0.82 | — | — | |
| SCHEMBL10885036 | 0.79 | CA12 (0.69) | — | |
| SCHEMBL1627711 | 0.79 | — | — | |
| SCHEMBL2058092 | 0.79 | CA12 (0.69) | — | |
| SCHEMBL15605765 | 0.79 | MAOA (0.40) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 45 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-3037511-B1 | SEMI-AQUEOUS PHOTORESIST OR SEMICONDUCTOR MANUFACTURING RESIDUE STRIPPING AND CLEANING COMPOSITION WITH IMPROVED SILICON PASSIVATION | VERSUM MAT US LLC (US) | 2022-07-06 | — | — | EP | claimed |
| US-10280189-B2 | Method for the synthesis of aminoalkylenephosphonic acid | MONSANTO TECHNOLOGY LLC (US) | 2019-05-07 | — | — | US | claimed |
| EP-1031884-B1 | Resist stripping agent and process of producing semiconductor devices using the same | MITSUBISHI GAS CHEMICAL CO (JP) | 2012-01-11 | — | — | EP | claimed |
| US-7968507-B2 | Composition for stripping and stripping method | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2011-06-28 | — | — | US | claimed |
| US-20090084406-A1 | Composition for stripping and stripping method | SAMSUNG ELECTRONICS CO., LTD. | 2009-04-02 | — | — | US | claimed |
| CN-101398639-A | Composition for stripping and stripping method | SAMSUNG ELECTRONICS CO LTD (KR) | 2009-04-01 | — | — | CN | claimed |
| US-6638694-B2 | Mixtures of amines, water soluble solvents and corrosion resistance agents, used for removing photoresist films and residues after etching semiconductor integrated circuits or liquid crystal displays | MITSUBISHI GAS CHEMICAL COMPANY, INC (JP) | 2003-10-28 | — | — | US | claimed |
| EP-1031884-A2 | Resist stripping agent and process of producing semiconductor devices using the same | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2000-08-30 | — | — | EP | claimed |
| US-20260132062-A1 | SIMULTANEOUS CONTROL OF SCALE, CORROSION, AND HYDROGEN SULFIDE-RELATED ISSUES USING A SINGLE PRODUCT | CHAMPIONX LLC (US) | 2026-05-14 | — | — | US | disclosed |
| US-20240209234-A1 | NON-SPHERICAL PRIMARY SILICA NANOPARTICLES AND THE USE THEREFOR | VERSUM MATERIALS US, LLC | 2024-06-27 | — | — | US | disclosed |
| EP-4326678-A1 | NON-SPHERICAL PRIMARY SILICA NANOPARTICLES AND THE USE THEREFOR | Versum Materials US, LLC (US) | 2024-02-28 | — | — | EP | disclosed |
| CN-116607132-A | Plating bath composition for electroless gold plating and method of depositing gold layer | 埃托特克德国有限公司 | 2023-08-18 | — | — | CN | disclosed |
| WO-2022258518-A1 | TITANIUM CATALYST FOR THE POLYESTER MANUFACTURING PROCESS | CLARIANT INTERNATIONAL LTD (CH) | 2022-12-15 | — | — | WO | disclosed |
| EP-4101817-A1 | NEW TITANIUM CATALYST FOR THE POLYESTER MANUFACTURING PROCESS | Clariant International Ltd (CH) | 2022-12-14 | — | — | EP | disclosed |
| US-20050148711-A1 | VOC free water reducible coating vehicles | VOCFREE, INC. | 2005-07-07 | — | — | US | disclosed |
| US-6730440-B1 | Composite body suitable for utilization as a lithium ion battery | BASF AKTIENGESELLSCHAFT (DE) | 2004-05-04 | — | — | US | disclosed |
| US-20040048761-A1 | Cleaning composition | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2004-03-11 | — | — | US | disclosed |
| US-6638694-B2 | Mixtures of amines, water soluble solvents and corrosion resistance agents, used for removing photoresist films and residues after etching semiconductor integrated circuits or liquid crystal displays | MITSUBISHI GAS CHEMICAL COMPANY, INC (JP) | 2003-10-28 | — | — | US | disclosed |
| US-20030186175-A1 | RESIST STRIPPING AGENT AND PROCESS OF PRODUCING SEMICONDUCTOR DEVICES USING THE SAME | IKEMOTO KAZUTO (JP) | 2003-10-02 | — | — | US | disclosed |
| EP-1031884-A2 | Resist stripping agent and process of producing semiconductor devices using the same | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2000-08-30 | — | — | EP | disclosed |