Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CYP1A2 | P05177 | 3/20 | 0.39 |
| ▸ | CA12 | O43570 | 3/20 | 0.39 |
| ▸ | CA2 | P00918 | 3/20 | 0.39 |
| ▸ | CA4 | P22748 | 3/20 | 0.39 |
| ▸ | CA6 | P23280 | 3/20 | 0.39 |
| ▸ | CA5A | P35218 | 3/20 | 0.39 |
| ▸ | CA7 | P43166 | 3/20 | 0.39 |
| ▸ | CA9 | Q16790 | 3/20 | 0.39 |
| ▸ | CA14 | Q9ULX7 | 3/20 | 0.39 |
| ▸ | CA5B | Q9Y2D0 | 3/20 | 0.39 |
| ▸ | CYP2C19 | P33261 | 3/20 | 0.39 |
| ▸ | TSHR | P16473 | 2/20 | 0.39 |
| ▸ | F13A1 | P00488 | 2/20 | 0.39 |
| ▸ | ALOX15 | P16050 | 2/20 | 0.39 |
| ▸ | THPO | P40225 | 2/20 | 0.39 |
| ▸ | MEN1 | O00255 | 2/20 | 0.39 |
| ▸ | CASP2 | P42575 | 2/20 | 0.39 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.39 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.39 |
| ▸ | RECQL | P46063 | 1/20 | 0.39 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL18045577 | 0.96 | MAOA (0.40) | CYP1A2CA12CA2CA4CA6 | |
| SCHEMBL15605765 | 0.96 | MAOA (0.40) | CYP1A2CA12CA2CA4CA6 | |
| SCHEMBL1720393 | 0.92 | — | — | |
| SCHEMBL4439355 | 0.89 | — | — | |
| SCHEMBL8768540 | 0.85 | — | — | |
| SCHEMBL2058204 | 0.84 | — | — | |
| SCHEMBL974968 | 0.84 | — | — | |
| SCHEMBL9036716 | 0.84 | — | — | |
| SCHEMBL1398359 | 0.82 | — | — | |
| SCHEMBL12942623 | 0.82 | TSHR (0.63) | TSHRMEN1KMT2AALDH1A1HSD17B10 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-1031884-B1 | Resist stripping agent and process of producing semiconductor devices using the same | MITSUBISHI GAS CHEMICAL CO (JP) | 2012-01-11 | — | — | EP | claimed |
| US-7968507-B2 | Composition for stripping and stripping method | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2011-06-28 | — | — | US | claimed |
| US-20090084406-A1 | Composition for stripping and stripping method | SAMSUNG ELECTRONICS CO., LTD. | 2009-04-02 | — | — | US | claimed |
| US-6638694-B2 | Mixtures of amines, water soluble solvents and corrosion resistance agents, used for removing photoresist films and residues after etching semiconductor integrated circuits or liquid crystal displays | MITSUBISHI GAS CHEMICAL COMPANY, INC (JP) | 2003-10-28 | — | — | US | claimed |
| US-20030186175-A1 | RESIST STRIPPING AGENT AND PROCESS OF PRODUCING SEMICONDUCTOR DEVICES USING THE SAME | IKEMOTO KAZUTO (JP) | 2003-10-02 | — | — | US | claimed |
| EP-1031884-A2 | Resist stripping agent and process of producing semiconductor devices using the same | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2000-08-30 | — | — | EP | claimed |
| US-10023530-B2 | Diamine, polyamic acid, and polyimide | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2018-07-17 | — | — | US | disclosed |
| US-20160264520-A1 | NOVEL DIAMINE, POLYAMIC ACID, AND POLYIMIDE | NISSAN CHEMICAL INDUSTRIES. LTD. (JP) | 2016-09-15 | — | — | US | disclosed |
| US-8163095-B2 | Composition for stripping and stripping method | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2012-04-24 | — | — | US | disclosed |
| EP-1031884-B1 | Resist stripping agent and process of producing semiconductor devices using the same | MITSUBISHI GAS CHEMICAL CO (JP) | 2012-01-11 | — | — | EP | disclosed |
| US-20110206829-A1 | COMPOSITION FOR STRIPPING AND STRIPPING METHOD | SAMSUNG DISPLAY CO., LTD. (KR) | 2011-08-25 | — | — | US | disclosed |
| US-7968507-B2 | Composition for stripping and stripping method | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2011-06-28 | — | — | US | disclosed |
| US-20090084406-A1 | Composition for stripping and stripping method | SAMSUNG ELECTRONICS CO., LTD. | 2009-04-02 | — | — | US | disclosed |
| US-6638694-B2 | Mixtures of amines, water soluble solvents and corrosion resistance agents, used for removing photoresist films and residues after etching semiconductor integrated circuits or liquid crystal displays | MITSUBISHI GAS CHEMICAL COMPANY, INC (JP) | 2003-10-28 | — | — | US | disclosed |
| US-20030186175-A1 | RESIST STRIPPING AGENT AND PROCESS OF PRODUCING SEMICONDUCTOR DEVICES USING THE SAME | IKEMOTO KAZUTO (JP) | 2003-10-02 | — | — | US | disclosed |
| EP-1031884-A2 | Resist stripping agent and process of producing semiconductor devices using the same | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2000-08-30 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-10023530-B2 | Diamine, polyamic acid, and polyimide | H1-2, H1-4, H1-0 | CYP1A2 3148/4885CA12 1283/4885CA2 2174/4885 |
| US-20160264520-A1 | NOVEL DIAMINE, POLYAMIC ACID, AND POLYIMIDE | H1-4, H1-2, H1-5 | CYP1A2 3538/4885CA12 1079/4885CA2 2161/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.