SCHEMBL17320477

SCHEMBL17320477

COC(=O)C1C2CC3C1OC(=O)C3C2C(=O)O

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
PPM1B O75688 1/20 0.41
PTPN1 P18031 1/20 0.41
PPP1CC P36873 1/20 0.41
POLB P06746 2/20 0.39
KMT2A Q03164 4/20 0.33
MEN1 O00255 2/20 0.33
L3MBTL1 Q9Y468 1/20 0.33
TDP1 Q9NUW8 1/20 0.33
CYP2D6 P10635 1/20 0.32
ALDH1A1 P00352 3/20 0.32
GLA P06280 1/20 0.32
HPGD P15428 1/20 0.32
HTT P42858 1/20 0.32
SLC6A4 P31645 1/20 0.32
SLC6A3 Q01959 1/20 0.32
TSHR P16473 1/20 0.31
ATM Q13315 1/20 0.31
NPC1 O15118 1/20 0.31
TP53 P04637 1/20 0.31
RAB9A P51151 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17320482 0.94 KMT2A (0.36) PPM1BPTPN1PPP1CCPOLBKMT2A
SCHEMBL17320300 0.86 POLB (0.39) POLBTDP1HTTTSHR
SCHEMBL17320286 0.83 KMT2A (0.34) KMT2AMEN1L3MBTL1ALDH1A1GLA
SCHEMBL12014001 0.82 KMT2A (0.34) PPM1BPTPN1PPP1CCPOLBKMT2A
SCHEMBL14001998 0.82 KMT2A (0.34) PPM1BPTPN1PPP1CCPOLBKMT2A
SCHEMBL3414738 0.82 KMT2A (0.34) PPM1BPTPN1PPP1CCPOLBKMT2A
SCHEMBL11988730 0.82 KMT2A (0.34) PPM1BPTPN1PPP1CCPOLBKMT2A
SCHEMBL962818 0.82 KMT2A (0.34) PPM1BPTPN1PPP1CCPOLBKMT2A
SCHEMBL22855676 0.82 KMT2A (0.34) PPM1BPTPN1PPP1CCPOLBKMT2A
SCHEMBL21567775 0.81 KMT2A (0.34) PPM1BPTPN1PPP1CCPOLBKMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20160252818-A9 PRODUCTION METHOD OF SEMICONDUCTOR ELEMENT, AND ION IMPLANTATION METHOD JSR CORPORATION (JP) 2016-09-01 US disclosed
US-20150355550-A1 PRODUCTION METHOD OF SEMICONDUCTOR ELEMENT, AND ION IMPLANTATION METHOD JSR CORPORATION (JP) 2015-12-10 US disclosed