SCHEMBL17320482

SCHEMBL17320482

COC(=O)C1C2CC3C1OC(=O)C3C2C(=O)OC

nearest known ligand 0.36

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 4/20 0.36
MEN1 O00255 1/20 0.36
L3MBTL1 Q9Y468 1/20 0.35
PPM1B O75688 1/20 0.34
PTPN1 P18031 1/20 0.34
PPP1CC P36873 1/20 0.34
ALDH1A1 P00352 2/20 0.34
GLA P06280 1/20 0.34
HPGD P15428 1/20 0.34
HTT P42858 1/20 0.34
NPC1 O15118 2/20 0.33
SMN1; SMN2 Q16637 2/20 0.33
TP53 P04637 1/20 0.33
RAB9A P51151 1/20 0.33
POLB P06746 1/20 0.33
CYP2D6 P10635 1/20 0.32
KDM4E B2RXH2 1/20 0.32
NPSR1 Q6W5P4 1/20 0.32
SLC6A4 P31645 1/20 0.31
SLC6A3 Q01959 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17320477 0.94 PPM1B (0.41) KMT2AMEN1L3MBTL1PPM1BPTPN1
SCHEMBL17320286 0.88 KMT2A (0.34) KMT2AMEN1L3MBTL1ALDH1A1GLA
SCHEMBL11988730 0.87 KMT2A (0.34) KMT2AMEN1L3MBTL1PPM1BPTPN1
SCHEMBL22855676 0.87 KMT2A (0.34) KMT2AMEN1L3MBTL1PPM1BPTPN1
SCHEMBL962818 0.87 KMT2A (0.34) KMT2AMEN1L3MBTL1PPM1BPTPN1
SCHEMBL3414738 0.87 KMT2A (0.34) KMT2AMEN1L3MBTL1PPM1BPTPN1
SCHEMBL14001998 0.87 KMT2A (0.34) KMT2AMEN1L3MBTL1PPM1BPTPN1
SCHEMBL12014001 0.87 KMT2A (0.34) KMT2AMEN1L3MBTL1PPM1BPTPN1
SCHEMBL21567775 0.86 KMT2A (0.34) KMT2AMEN1L3MBTL1PPM1BPTPN1
SCHEMBL21910752 0.86 KMT2A (0.34) KMT2AMEN1L3MBTL1PPM1BPTPN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20160252818-A9 PRODUCTION METHOD OF SEMICONDUCTOR ELEMENT, AND ION IMPLANTATION METHOD JSR CORPORATION (JP) 2016-09-01 US disclosed
US-20150355550-A1 PRODUCTION METHOD OF SEMICONDUCTOR ELEMENT, AND ION IMPLANTATION METHOD JSR CORPORATION (JP) 2015-12-10 US disclosed