SCHEMBL17341735

SCHEMBL17341735

O=[N+]([O-])c1ccc(O)c2cccc(C(C(F)(F)F)(C(F)(F)F)C(F)(F)F)c12

nearest known ligand 0.51

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ CTSB P07858 2/20 0.51
▸ MAPT P10636 4/20 0.44
▸ LMNA P02545 2/20 0.44
▸ MEN1 O00255 2/20 0.44
▸ KMT2A Q03164 2/20 0.44
▸ TDP1 Q9NUW8 3/20 0.41
▸ ALDH1A1 P00352 3/20 0.41
▸ SMN1; SMN2 Q16637 2/20 0.41
▸ NPC1 O15118 2/20 0.41
▸ RAB9A P51151 2/20 0.41
▸ CASP6 P55212 2/20 0.41
▸ KDM4E B2RXH2 1/20 0.41
▸ BRD4 O60885 1/20 0.41
▸ HSP90AA1 P07900 1/20 0.41
▸ CHRM1 P11229 1/20 0.41
▸ DRD2 P14416 1/20 0.41
▸ ALOX12 P18054 1/20 0.41
▸ ADRA2B P18089 1/20 0.41
▸ ADRA2C P18825 1/20 0.41
▸ CHRM3 P20309 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17058720 0.78 CTSB (0.65) CTSBMAPTLMNAMEN1KMT2A
SCHEMBL19449768 0.77 CTSB (0.59) CTSBMAPTLMNAMEN1KMT2A
SCHEMBL19454968 0.74 CTSB (0.59) CTSBMAPTLMNAMEN1KMT2A
SCHEMBL11813764 0.72 CTSB (0.65) CTSBMAPTLMNAMEN1KMT2A
SCHEMBL11783605 0.71 CTSB (0.54) CTSBMAPTLMNAMEN1KMT2A
SCHEMBL11818394 0.71 TDP1 (0.55) CTSBMEN1KMT2ATDP1ALDH1A1
SCHEMBL10422834 0.71 CTSB (0.54) CTSBMAPTLMNAMEN1KMT2A
SCHEMBL28307479 0.70 CTSB (0.67) CTSBMAPTLMNAMEN1KMT2A
SCHEMBL17058712 0.69 CTSB (0.42) CTSBMAPTLMNAMEN1KMT2A
SCHEMBL589663 0.69 CTSB (1.00) CTSBMAPTLMNAMEN1KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10042258-B2 Composition for forming a resist upper-layer film and method for producing a semiconductor device using the composition NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2018-08-07 — — US disclosed
US-9746768-B2 Resist overlayer film forming composition for lithography and method for producing semiconductor device using the same NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2017-08-29 — — US disclosed
US-9746768-B2 Resist overlayer film forming composition for lithography and method for producing semiconductor device using the same NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2017-08-29 — — US disclosed
US-20170205711-A1 COMPOSITION FOR FORMING A RESIST UPPER-LAYER FILM AND METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE USING THE COMPOSITION NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2017-07-20 — — US disclosed
US-20170205711-A1 COMPOSITION FOR FORMING A RESIST UPPER-LAYER FILM AND METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE USING THE COMPOSITION NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2017-07-20 — — US disclosed
US-20150362835-A1 RESIST OVERLAYER FILM FORMING COMPOSITION FOR LITHOGRAPHY AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE USING THE SAME NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2015-12-17 — — US disclosed
US-20150362835-A1 RESIST OVERLAYER FILM FORMING COMPOSITION FOR LITHOGRAPHY AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE USING THE SAME NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2015-12-17 — — US disclosed
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