SCHEMBL17058712

SCHEMBL17058712

O=[N+]([O-])c1ccc(O)c2cc3c(Cl)ccc(C(C(F)(F)F)(C(F)(F)F)C(F)(F)F)c3cc12

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ CTSB P07858 3/20 0.42
▸ DNMT1 P26358 1/20 0.37
▸ DNMT3A Q9Y6K1 1/20 0.37
▸ VCAM1 P19320 2/20 0.37
▸ TDP1 Q9NUW8 2/20 0.36
▸ MAPK1 P28482 3/20 0.35
▸ TSHR P16473 2/20 0.35
▸ CYP1A2 P05177 1/20 0.35
▸ CYP2D6 P10635 1/20 0.35
▸ ALDH1A1 P00352 4/20 0.35
▸ CYP3A4 P08684 1/20 0.35
▸ CA12 O43570 1/20 0.35
▸ CA1 P00915 1/20 0.35
▸ CA2 P00918 1/20 0.35
▸ CA9 Q16790 1/20 0.35
▸ LMNA P02545 3/20 0.35
▸ MAPT P10636 3/20 0.35
▸ MEN1 O00255 3/20 0.35
▸ KMT2A Q03164 3/20 0.35
▸ SMN1; SMN2 Q16637 2/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28978906 0.76 CTSB (0.68) CTSBTDP1MAPK1TSHRALDH1A1
SCHEMBL17341735 0.69 CTSB (0.51) CTSBTDP1TSHRALDH1A1CYP3A4
SCHEMBL27895855 0.68 CTSB (0.61) CTSBVCAM1TDP1MAPK1TSHR
SCHEMBL11058082 0.66 CTSB (0.68) CTSBTDP1MAPK1TSHRALDH1A1
SCHEMBL10163668 0.64 CTSB (0.54) CTSBTDP1MAPK1TSHRALDH1A1
SCHEMBL423560 0.62 CTSB (0.53) CTSBTDP1MAPK1TSHRCYP1A2
SCHEMBL8372589 0.62 ALDH1A1 (0.42) VCAM1TDP1MAPK1TSHRCYP1A2
SCHEMBL17341738 0.62 HSD17B1 (0.44) TSHRCYP1A2CYP3A4MAPTMEN1
SCHEMBL3550072 0.62 TDP1 (0.47) VCAM1TDP1MAPK1TSHRALDH1A1
SCHEMBL1023324 0.62 ALDH1A1 (0.47) VCAM1TDP1MAPK1TSHRCYP1A2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10042258-B2 Composition for forming a resist upper-layer film and method for producing a semiconductor device using the composition NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2018-08-07 — — US disclosed
US-20170293227-A1 COATING LIQUID FOR RESIST PATTERN COATING NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2017-10-12 — — US disclosed
US-20170293227-A1 COATING LIQUID FOR RESIST PATTERN COATING NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2017-10-12 — — US disclosed
US-9746768-B2 Resist overlayer film forming composition for lithography and method for producing semiconductor device using the same NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2017-08-29 — — US disclosed
US-9746768-B2 Resist overlayer film forming composition for lithography and method for producing semiconductor device using the same NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2017-08-29 — — US disclosed
US-20170205711-A1 COMPOSITION FOR FORMING A RESIST UPPER-LAYER FILM AND METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE USING THE COMPOSITION NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2017-07-20 — — US disclosed
US-20170205711-A1 COMPOSITION FOR FORMING A RESIST UPPER-LAYER FILM AND METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE USING THE COMPOSITION NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2017-07-20 — — US disclosed
US-9494864-B2 Resist overlayer film forming composition for lithography and method for manufacturing semiconductor device using the same NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2016-11-15 — — US disclosed
US-9494864-B2 Resist overlayer film forming composition for lithography and method for manufacturing semiconductor device using the same NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2016-11-15 — — US disclosed
US-20150362835-A1 RESIST OVERLAYER FILM FORMING COMPOSITION FOR LITHOGRAPHY AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE USING THE SAME NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2015-12-17 — — US disclosed
US-20150362835-A1 RESIST OVERLAYER FILM FORMING COMPOSITION FOR LITHOGRAPHY AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE USING THE SAME NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2015-12-17 — — US disclosed
US-20150248057-A1 RESIST OVERLAYER FILM FORMING COMPOSITION FOR LITHOGRAPHY AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2015-09-03 — — US disclosed
US-20150248057-A1 RESIST OVERLAYER FILM FORMING COMPOSITION FOR LITHOGRAPHY AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2015-09-03 — — US disclosed
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