SCHEMBL17404435

SCHEMBL17404435

CCC(C)(C)C(=O)OC1COC(=O)C1(C)C

nearest known ligand 0.36

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SMN1; SMN2 Q16637 2/20 0.36
FKBP1A P62942 2/20 0.32
MAPT P10636 2/20 0.30
HIF1A Q16665 1/20 0.30
ALDH1A1 P00352 2/20 0.30
CYP3A4 P08684 2/20 0.30
HMGCR P04035 2/20 0.30
KDM4E B2RXH2 1/20 0.30
USP2 O75604 1/20 0.30
NR1I2 O75469 1/20 0.30
ABCB11 O95342 1/20 0.30
NR3C1 P04150 1/20 0.30
PGR P06401 1/20 0.30
ABCB1 P08183 1/20 0.30
ADORA3 P0DMS8 1/20 0.30
CYP2C8 P10632 1/20 0.30
CHRM1 P11229 1/20 0.30
ADRB3 P13945 1/20 0.30
GABRA1 P14867 1/20 0.30
ADRA2B P18089 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12935429 0.82 SMN1; SMN2 (0.33) SMN1; SMN2
SCHEMBL12963982 0.82 SMN1; SMN2 (0.33) SMN1; SMN2
SCHEMBL111845 0.77 ALDH1A1 (0.42) SMN1; SMN2FKBP1AMAPTALDH1A1CYP3A4
SCHEMBL25468149 0.73 SMN1; SMN2 (0.32) SMN1; SMN2FKBP1A
SCHEMBL17404439 0.73 L3MBTL1 (0.32)
SCHEMBL18253433 0.73 HMGCR (0.32) SMN1; SMN2MAPTALDH1A1CYP3A4HMGCR
SCHEMBL17195524 0.72 SMN1; SMN2 (0.35) SMN1; SMN2FKBP1A
SCHEMBL12227767 0.72 ALDH1A1 (0.36) SMN1; SMN2FKBP1AMAPTALDH1A1CYP3A4
SCHEMBL15978047 0.72 FKBP1A (0.34) SMN1; SMN2FKBP1AMAPTALDH1A1CYP3A4
SCHEMBL18748722 0.72 FKBP1A (0.37) SMN1; SMN2FKBP1AMAPTALDH1A1CYP3A4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9551931-B2 Method of forming pattern, actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film, process for manufacturing electronic device and electronic device FUJIFILM CORPORATION (JP) 2017-01-24 US disclosed
US-9250517-B2 Polymer, positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-02-02 US disclosed
US-20160004157-A1 METHOD OF FORMING PATTERN, ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM, PROCESS FOR MANUFACTURING ELECTRONIC DEVICE AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-01-07 US disclosed