Predicted protein targets (top 19)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | GAA | P10253 | 2/20 | 0.39 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.39 |
| ▸ | BLM | P54132 | 2/20 | 0.39 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.39 |
| ▸ | LMNA | P02545 | 1/20 | 0.39 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.39 |
| ▸ | MAPT | P10636 | 1/20 | 0.39 |
| ▸ | GFER | P55789 | 1/20 | 0.39 |
| ▸ | PMP22 | Q01453 | 1/20 | 0.39 |
| ▸ | POLB | P06746 | 1/20 | 0.38 |
| ▸ | ADRB2 | P07550 | 1/20 | 0.38 |
| ▸ | MMP7 | P09237 | 1/20 | 0.37 |
| ▸ | CES1 | P23141 | 4/20 | 0.36 |
| ▸ | FAAH | O00519 | 3/20 | 0.36 |
| ▸ | NR1H2 | P55055 | 1/20 | 0.36 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.36 |
| ▸ | FFAR1 | O14842 | 1/20 | 0.36 |
| ▸ | HTR1A | P08908 | 1/20 | 0.36 |
| ▸ | DRD2 | P14416 | 1/20 | 0.36 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Trifluoromethanesulfonic Acid SCHEMBL3362549 | 0.85 | ALDH1A1 (0.50) | GAAALDH1A1BLMKDM4ELMNA | |
| Trifluoromethanesulfonic Acid SCHEMBL20262657 | 0.83 | ALDH1A1 (0.48) | GAAALDH1A1BLMKDM4ELMNA | |
| SCHEMBL1956391 | 0.81 | HTR1A (0.48) | ALDH1A1ADRB2NR1H2HTR1ADRD2 | |
| Trifluoromethanesulfonic Acid SCHEMBL3361379 | 0.78 | ALDH1A1 (0.44) | GAAALDH1A1BLMKDM4ELMNA | |
| Phenylethyl Alcohol SCHEMBL6586113 | 0.76 | TDP1 (0.61) | GAAALDH1A1BLMKDM4ELMNA | |
| Phenethylamine SCHEMBL28351577 | 0.75 | TAAR1 (0.59) | GAAALDH1A1BLMKDM4ELMNA | |
| Trifluoromethanesulfonic Acid SCHEMBL29710479 | 0.74 | IDO1 (0.56) | GAAALDH1A1BLMKDM4ELMNA | |
| Butylbenzyl SCHEMBL28784104 | 0.72 | MEN1 (0.50) | ALDH1A1POLBCES1FAAHKMT2A | |
| Trifluoromethanesulfonic Acid SCHEMBL28351498 | 0.72 | MAOA (0.55) | GAAALDH1A1BLMKDM4ELMNA | |
| Trifluoromethanesulfonic Acid SCHEMBL1876723 | 0.72 | TSHR (0.58) | GAAALDH1A1BLMKDM4ELMNA |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7371500-B2 | Positive photosensitive insulating resin composition and cured product thereof | JSR CORPORATION (JP) | 2008-05-13 | — | — | US | claimed |
| US-20070166632-A1 | POSITIVE PHOTOSENSITIVE INSULATING RESIN COMPOSITION AND CURED PRODUCT THEREOF | JSR CORPORATION (JP) | 2007-07-19 | — | — | US | claimed |
| EP-1469346-B1 | POSITIVE PHOTOSENSITIVE INSULATING RESIN COMPOSITION AND CURED OBJECT OBTAINED THEREFROM | JSR CORP (JP) | 2015-08-05 | — | — | EP | disclosed |
| EP-2389612-A1 | A PHOTORESIST IMAGE-FORMING PROCESS USING DOUBLE PATTERNING | AZ Electronic Materials USA Corp. (US) | 2011-11-30 | — | — | EP | disclosed |
| WO-2010084372-A1 | A PHOTORESIST IMAGE-FORMING PROCESS USING DOUBLE PATTERNING | AZ ELECTRONIC MATERIALS USA CORP. (US) | 2010-07-29 | — | — | WO | disclosed |
| US-20100183851-A1 | Photoresist Image-forming Process Using Double Patterning | CAO YI | 2010-07-22 | — | — | US | disclosed |
| US-7371500-B2 | Positive photosensitive insulating resin composition and cured product thereof | JSR CORPORATION (JP) | 2008-05-13 | — | — | US | disclosed |
| US-20070166632-A1 | POSITIVE PHOTOSENSITIVE INSULATING RESIN COMPOSITION AND CURED PRODUCT THEREOF | JSR CORPORATION (JP) | 2007-07-19 | — | — | US | disclosed |
| US-7214454-B2 | Positively photosensitive insulating resin composition and cured object obtained therefrom | JSR CORPORATION (JP) | 2007-05-08 | — | — | US | disclosed |
| US-7015256-B2 | Composition for forming photosensitive dielectric material, and transfer film, dielectric material and electronic parts using the same | JSR CORPORATION (JP) | 2006-03-21 | — | — | US | disclosed |
| EP-1471540-A1 | COMPOSITION FOR FORMING PHOTOSENSITIVE DIELECTRIC MATERIAL, AND TRANSFER FILM, DIELECTRIC MATERIAL AND ELECTRONIC PARTS USING THE SAME | JSR Corporation (JP) | 2004-10-27 | — | — | EP | disclosed |
| EP-1469346-A1 | POSITIVELY PHOTOSENSITIVE INSULATING RESIN COMPOSITION AND CURED OBJECT OBTAINED THEREFROM | JSR Corporation (JP) | 2004-10-20 | — | — | EP | disclosed |
| US-20040126696-A1 | Positively photosensitive insulating resin composition and cured object obtained therefrom | JSR CORPORATION (JP) | 2004-07-01 | — | — | US | disclosed |
| US-20040094752-A1 | Composition for forming photosensitive dielectric material, and transfer film, dielectric material and electronic parts using the same | JSR CORPORATION (JP) | 2004-05-20 | — | — | US | disclosed |