SCHEMBL1758997

SCHEMBL1758997

CCCC[S+](CCCC)c1cccc2ccccc12

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HTR1B P28222 2/20 0.40
CNR1 P21554 5/20 0.39
CNR2 P34972 5/20 0.39
CYP2C9 P11712 1/20 0.38
HTR1D P28221 1/20 0.38
ALDH1A1 P00352 3/20 0.38
CYP2A6 P11509 1/20 0.38
GAA P10253 3/20 0.36
TDP1 Q9NUW8 2/20 0.36
KDM4E B2RXH2 2/20 0.36
NPC1 O15118 2/20 0.36
HTT P42858 2/20 0.36
RAB9A P51151 2/20 0.36
SMN1; SMN2 Q16637 2/20 0.36
L3MBTL1 Q9Y468 1/20 0.36
MEN1 O00255 1/20 0.36
GLA P06280 1/20 0.36
KMT2A Q03164 1/20 0.36
RCE1 Q9Y256 1/20 0.36
SLC6A4 P31645 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Water SCHEMBL9241514 0.89 CNR1 (0.39) HTR1BCNR1CNR2CYP2C9ALDH1A1
Hydrochloric Acid SCHEMBL9516769 0.89 CNR1 (0.39) HTR1BCNR1CNR2CYP2C9ALDH1A1
Trifluoromethanesulfonic Acid SCHEMBL112169 0.84 KCNH2 (0.44) CNR1CNR2CYP2C9GAATDP1
SCHEMBL700284 0.80 CYP2A6 (0.43) HTR1BCYP2C9ALDH1A1CYP2A6TDP1
Trifluoromethanesulfonic Acid SCHEMBL4624312 0.78 KCNH2 (0.39) CNR1CNR2CYP2C9GAATDP1
SCHEMBL12762160 0.75 IDO1 (0.45) ALDH1A1
Trifluoromethanesulfonic Acid SCHEMBL6564917 0.74 KCNH2 (0.40)
Phenanthrene SCHEMBL29016443 0.71 ALDH1A1 (0.63) HTR1BALDH1A1CYP2A6GAATDP1
SCHEMBL20245323 0.70 HTR1B (0.43) HTR1BHTR1DMEN1KMT2ASLC6A4
SCHEMBL4857402 0.69 ALDH1A1 (0.40) CYP2C9ALDH1A1CYP2A6TDP1KDM4E

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 57 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1637928-B1 Photoresist monomer having spiro cyclic ketal group, polymer thereof and photoresist composition including the same DONGJIN SEMICHEM CO LTD (KR) 2012-05-02 EP claimed
EP-1736828-B1 Photoresist monomer, polymer thereof and photoresist composition including the same DONGJIN SEMICHEM CO LTD (KR) 2010-11-24 EP claimed
US-6613493-B2 Formed by nitrating a polyvinylphenol or a novalak and reacting the the hydroxy group with with a halide comprising an acid labile protecting group, such as 2-(1-bromoethyl)-1,3-difluorobenzene HYNIX SEMICONDUCTOR INC (KR) 2003-09-02 US claimed
US-6608158-B2 High transparency at 193 nm wavelength, provides increased etching resistance; formed without 5-norbonen-2-carboxylate monomers which do not have offensive odors of the free acid HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. (KR) 2003-08-19 US claimed
US-20030013036-A1 Photoresist polymer and composition having nitro groups HYNIX SEMICONDUCTOR INC. (KR) 2003-01-16 US claimed
US-20020068803-A1 Copolymer resin, preparation thereof, and photoresist using the same HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. (KR) 2002-06-06 US claimed
US-6265130-B1 COPOLYMERS OF BICYCLOALKENECARBONYLMALONATES HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. (KR) 2001-07-24 US claimed
WO-2021065450-A1 ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR PRODUCING ELECTRONIC DEVICE 富士フイルム株式会社 2021-04-08 WO disclosed
EP-3394675-A1 MATERIALS CONTAINING METAL OXIDES, PROCESSES FOR MAKING SAME, AND PROCESSES FOR USING SAME AZ Electronic Materials Luxembourg S.à.r.l. (LU) 2018-10-31 EP disclosed
WO-2017108822-A1 MATERIALS CONTAINING METAL OXIDES, PROCESSES FOR MAKING SAME, AND PROCESSES FOR USING SAME AZ Electronic Materials (Luxembourg) S.à.r.l. (LU) 2017-06-29 WO disclosed
US-9389515-B2 Photoresist resin composition and method of forming patterns by using the same SAMSUNG DISPLAY CO., LTD. (KR) 2016-07-12 US disclosed
US-9321875-B2 Additive for resist and resist composition comprising same KOREA KUMHO PETROCHEMICAL CO., LTD. (KR) 2016-04-26 US disclosed
US-20150212422-A1 PHOTORESIST RESIN COMPOSITION AND METHOD OF FORMING PATTERNS BY USING THE SAME SAMSUNG DISPLAY CO LTD (KR) 2015-07-30 US disclosed
US-6312865-B1 Semiconductor device using polymer-containing photoresist, and process for manufacturing the same HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. (KR) 2001-11-06 US disclosed
US-6248847-B1 ACRYLATED ESTER HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. (KR) 2001-06-19 US disclosed
US-6146810-A REGULATING THE CONTENT AND KIND OF THE NORBORNENE DERIVATIVES IN THE MATRIX POLYMERS IN ADDITION TO BEING SUPERIOR IN ADHERENCE TO SUBSTRATE AND DRY ETCH RESISTANCE KOREA KUMHO PETROCHEMICAL CO., LTD. (KR) 2000-11-14 US disclosed
US-6132926-A ArF photoresist copolymers HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. (KR) 2000-10-17 US disclosed
CN-1232826-A Novel monomer and polymer for photoresist, and photoresist using the same HYUNDAI ELECTRONICS IND (KR) 1999-10-27 CN disclosed
CN-1228410-A Copolymer resin, preparation thereof, and photo resist using the same HYUNDAI ELECTRONICS IND (KR) 1999-09-15 CN disclosed
CN-1221969-A Semiconductor device using polymer-containing photoresist, and process for manufacturing the same HYUNDAI ELECTRONICS IND (KR) 1999-07-07 CN disclosed