Trifluoromethanesulfonic Acid

Trifluoromethanesulfonic Acid

SCHEMBL112169

CCCC[S+](CCCC)c1cccc2ccccc12.O=S(=O)([O-])C(F)(F)F

nearest known ligand 0.44

Full drug profile on Sugi Atlas →

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
KCNH2 Q12809 7/20 0.44
GPR3 P46089 1/20 0.34
GAA P10253 1/20 0.34
TDP1 Q9NUW8 1/20 0.34
L3MBTL1 Q9Y468 1/20 0.34
ACHE P22303 5/20 0.34
CNR1 P21554 4/20 0.34
CNR2 P34972 4/20 0.34
CYP2C9 P11712 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Trifluoromethanesulfonic Acid SCHEMBL4624312 0.93 KCNH2 (0.39) KCNH2GPR3GAATDP1L3MBTL1
Trifluoromethanesulfonic Acid SCHEMBL6564917 0.92 KCNH2 (0.40) KCNH2GPR3ACHE
Trifluoromethanesulfonic Acid SCHEMBL646691 0.86 KCNH2 (0.39) KCNH2GPR3ACHE
Trifluoromethanesulfonic Acid SCHEMBL31168264 0.86 KCNH2 (0.39) KCNH2GPR3ACHE
SCHEMBL1758997 0.84 HTR1B (0.40) GAATDP1L3MBTL1CNR1CNR2
Trifluoromethanesulfonic Acid SCHEMBL31168285 0.79 GPR3 (0.40) KCNH2GPR3ACHE
Trifluoromethanesulfonic Acid SCHEMBL645454 0.79 GPR3 (0.40) KCNH2GPR3ACHE
Trifluoromethanesulfonic Acid SCHEMBL31235599 0.78 GPR3 (0.42) KCNH2GPR3ACHE
Trifluoromethanesulfonic Acid SCHEMBL66197 0.78 GPR3 (0.42) KCNH2GPR3ACHE
Trifluoromethanesulfonic Acid SCHEMBL7708065 0.77 GPR3 (0.35) KCNH2GPR3ACHE

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 772 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2026107261-A1 PURIFICATION OF PHOTORESIST POLYMER BY SURFACE-MODIFIED POROUS POLYETHYLENE MEMBRANE ENTEGRIS, INC. (US) 2026-05-21 WO claimed
EP-1637928-B1 Photoresist monomer having spiro cyclic ketal group, polymer thereof and photoresist composition including the same DONGJIN SEMICHEM CO LTD (KR) 2012-05-02 EP claimed
US-8029970-B2 Composition for manufacturing barrier rib, and plasma display panel manufactured by the same SAMSUNG SDI CO., LTD. (KR) 2011-10-04 US claimed
US-7994050-B2 Method for forming dual damascene pattern HYNIX SEMICONDUCTOR INC. (KR) 2011-08-09 US claimed
US-20100311239-A1 Method for forming dual damascene pattern LEE KI LYOUNG 2010-12-09 US claimed
EP-1736828-B1 Photoresist monomer, polymer thereof and photoresist composition including the same DONGJIN SEMICHEM CO LTD (KR) 2010-11-24 EP claimed
US-7811929-B2 Method for forming dual damascene pattern HYNIX SEMICONDUCTOR, INC. (KR) 2010-10-12 US claimed
US-7749680-B2 Photoresist composition and method for forming pattern of a semiconductor device HYNIX SEMICONDUCTOR INC. (KR) 2010-07-06 US claimed
US-7611823-B1 Photosensitive polymeric material for WORM optical data storage with two-photon fluorescent readout UNIVERSITY OF CENTRAL FLORIDA RESEARCH FOUNDATION, INC. (US) 2009-11-03 US claimed
US-7598018-B1 Photosensitive polymeric material for worm optical data storage with two-photon fluorescent readout UNIVERSITY OF CENTRAL FLORIDA RESEARCH FOUNDATION, INC. (US) 2009-10-06 US claimed
CN-1318773-A Photoresist composition for etch-resistant agent flowing process and method for forming contact hole using the same HYUNDAI ELECTRONICS IND (KR) 2001-10-24 CN claimed
US-20010031420-A1 Partially crosslinked polymer for bilayer photoresist HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. (KR) 2001-10-18 US claimed
US-6291131-B1 ADDITION POLYMERIZATION OF MONOMERS TO FORM PHOTORESISTS COPOLYMER HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. (KR) 2001-09-18 US claimed
US-6235448-B1 EXPOSURE TO LIGHT SOURCE; DEVELOPMENT; SEMICONDUCTORS HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. (KR) 2001-05-22 US claimed
US-6235447-B1 FORMING PATTERN; SEMICONDUCTOR HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. (KR) 2001-05-22 US claimed
US-6225020-B1 SUCH AS USED IN 4 G OR 16 G DRAM SEMICONDUCTOR DEVICES USING A LIGHT SOURCE SUCH AS ARF, AN E-BEAM, EUV, OR AN ION BEAM, PHOTORESIST FOR THE TOP SURFACE IMAGE (TSI) PROCESS USING SILYLATION, MALEIMIDE ANDNORBONENE CARBOXYLATE COMONOMERS, HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. (KR) 2001-05-01 US claimed
US-6165672-A Maleimide or alicyclic olefin-based monomers, copolymer resin of these monomers and photoresist using the resin HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. (KR) 2000-12-26 US claimed
US-6132926-A ArF photoresist copolymers HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. (KR) 2000-10-17 US claimed
US-6132936-A Monomer and polymer for photoresist, and photoresist using the same HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. (KR) 2000-10-17 US claimed
US-6063542-A Polymer for positive photoresist and chemical amplification positive photoresist composition comprising the same KOREA KUMHO PETROCHEMICAL CO., LTD. (KR) 2000-05-16 US claimed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20010031420-A1 Partially crosslinked polymer for bilayer photoresist LCP1, ARPC4, PARP14 KCNH2 2684/4885GPR3 1231/4885GAA 4688/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.