SCHEMBL700284

SCHEMBL700284

CC[S+](CC)c1cccc2ccccc12

nearest known ligand 0.43

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
CYP2A6 P11509 5/20 0.43
ALDH1A1 P00352 3/20 0.43
TSHR P16473 3/20 0.40
HSD17B10 Q99714 2/20 0.40
TDP1 Q9NUW8 1/20 0.40
CYP1A2 P05177 5/20 0.39
CYP2C19 P33261 2/20 0.39
CYP2D6 P10635 1/20 0.39
HPGD P15428 2/20 0.38
CYP3A4 P08684 1/20 0.38
KEAP1 Q14145 1/20 0.38
CYP2C9 P11712 1/20 0.38
HPRT1 P00492 1/20 0.37
KDM4E B2RXH2 1/20 0.36
LMNA P02545 1/20 0.36
HTR1B P28222 1/20 0.36
ELANE P08246 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Trifluoromethanesulfonic Acid SCHEMBL646691 0.82 KCNH2 (0.39) KEAP1ELANE
Trifluoromethanesulfonic Acid SCHEMBL31168264 0.82 KCNH2 (0.39) KEAP1ELANE
SCHEMBL1758997 0.80 HTR1B (0.40) CYP2A6ALDH1A1TDP1CYP1A2CYP2C19
SCHEMBL4857402 0.79 ALDH1A1 (0.40) CYP2A6ALDH1A1TSHRHSD17B10TDP1
SCHEMBL9192708 0.76 ALDH1A1 (0.38) CYP2A6ALDH1A1TSHRHSD17B10TDP1
SCHEMBL10022953 0.75 ALDH1A1 (0.48) CYP2A6ALDH1A1TSHRHSD17B10TDP1
SCHEMBL31381445 0.75 ALDH1A1 (0.48) CYP2A6ALDH1A1TSHRHSD17B10TDP1
SCHEMBL702805 0.75 ALDH1A1 (0.48) CYP2A6ALDH1A1TSHRHSD17B10TDP1
SCHEMBL245440 0.74 ALDH1A1 (0.50) CYP2A6ALDH1A1TSHRHSD17B10TDP1
SCHEMBL29547056 0.74 ALDH1A1 (0.50) CYP2A6ALDH1A1TSHRHSD17B10TDP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 72 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20250147418-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING RESIST PATTERN FILM, AND METHOD FOR PRODUCING PLATED SHAPED ARTICLE JSR CORPORATION (JP) 2025-05-08 US disclosed
CN-119330866-A A photoacid generator Photoresist composition comprising the same 湖北鼎龙控股股份有限公司 2025-01-21 CN disclosed
CN-118511127-A Photosensitive resin composition, method for producing resist pattern film, and method for producing plating molded article JSR株式会社 2024-08-16 CN disclosed
WO-2023157801-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING RESIST PATTERN FILM, AND METHOD FOR PRODUCING PLATED SHAPED ARTICLE JSR株式会社 2023-08-24 WO disclosed
US-10423083-B2 Cleaning method of immersion liquid, immersion liquid cleaning composition, and substrate JSR CORPORATION (JP) 2019-09-24 US disclosed
EP-2325695-B1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORP (JP) 2017-12-20 EP disclosed
EP-2325694-B1 RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST PATTERN FORMATION METHOD JSR CORP (JP) 2017-11-08 EP disclosed
US-20170176878-A1 CLEANING METHOD OF IMMERSION LIQUID, IMMERSION LIQUID CLEANING COMPOSITION, AND SUBSTRATE JSR CORPORATION (JP) 2017-06-22 US disclosed
US-9459532-B2 Radiation-sensitive resin composition, polymer and compound JSR CORPORATION (JP) 2016-10-04 US disclosed
US-9259668-B2 Cleaning method of immersion liquid, immersion liquid cleaning composition, and substrate JSR CORPORATION (JP) 2016-02-16 US disclosed
EP-1679314-A1 SILANE COMPOUND, POLYSILOXANE AND RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2006-07-12 EP disclosed
EP-1641848-A1 PHOTORESIST POLYMER COMPOSITIONS JSR Corporation (JP) 2006-04-05 EP disclosed
US-20050171226-A1 Radiation sensitive resin composition JSR CORPORATION (JP) 2005-08-04 US disclosed
EP-1557718-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2005-07-27 EP disclosed
WO-2005003198-A1 PHOTORESIST POLYMER COMPOSITIONS JSR CORPORATION (JP) 2005-01-13 WO disclosed
US-20040143082-A1 Polysiloxane, process for production thereof and radiation-sensitive resin composition JSR CORPORATION (JP) 2004-07-22 US disclosed
EP-1398339-A1 POLYSILOXANE, PROCESS FOR PRODUCTION THEREOF AND RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2004-03-17 EP disclosed
US-20040048192-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2004-03-11 US disclosed
US-20030219680-A1 Photoresists useful for microfabrication utilizing deep ultraviolet rays such as an excimer laser, x-rays such as synchrotron radiation, and electron beams JSR CORPORATION (JP) 2003-11-27 US disclosed
US-20030170561-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2003-09-11 US disclosed