SCHEMBL17679448

SCHEMBL17679448

CC(F)(F)C(F)(F)CCS(=O)(=O)N1CCOCC1

nearest known ligand 0.43

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
LMNA P02545 2/20 0.43
ALDH1A1 P00352 3/20 0.40
CA12 O43570 1/20 0.39
CA7 P43166 1/20 0.39
CA14 Q9ULX7 1/20 0.39
KDM4E B2RXH2 1/20 0.36
SMN1; SMN2 Q16637 4/20 0.35
TSHR P16473 3/20 0.35
L3MBTL1 Q9Y468 2/20 0.35
TRPV4 Q9HBA0 1/20 0.34
ABCC9 O60706 1/20 0.33
ABCC8 Q09428 1/20 0.33
KCNJ11 Q14654 1/20 0.33
KCNJ8 Q15842 1/20 0.33
CYP1A2 P05177 1/20 0.33
HTT P42858 1/20 0.32
CNR1 P21554 2/20 0.32
CNR2 P34972 2/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL112303 0.83 TSHR (0.35) LMNAALDH1A1KDM4ETSHRL3MBTL1
SCHEMBL15693585 0.75 CA12 (0.59) LMNAALDH1A1CA12CA7CA14
SCHEMBL4547019 0.72 ALDH1A1 (0.61) LMNAALDH1A1CA12CA7CA14
SCHEMBL7602303 0.71 CA12 (0.59) LMNAALDH1A1CA12CA7CA14
SCHEMBL17036741 0.71 ALDH1A1 (0.51) LMNAALDH1A1CA12CA7CA14
SCHEMBL12403764 0.71 LMNA (0.44) LMNAALDH1A1CA12CA7CA14
SCHEMBL8713877 0.71 CA12 (0.48) LMNAALDH1A1CA12CA7CA14
SCHEMBL7297373 0.69 ALDH1A1 (0.50) LMNAALDH1A1CA12CA7CA14
SCHEMBL18893557 0.69 ALDH1A1 (0.41) LMNAALDH1A1CA12CA7CA14
SCHEMBL4311448 0.69 LMNA (0.51) LMNAALDH1A1CA12CA7CA14

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9465298-B2 Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method FUJIFILM CORPORATION (JP) 2016-10-11 US disclosed
US-20160103395-A1 PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2016-04-14 US disclosed