SCHEMBL112303

SCHEMBL112303

CC(F)(F)C(F)(F)CCS(=O)(=O)N1CCCCC1

nearest known ligand 0.35

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TSHR P16473 4/20 0.35
HPGD P15428 1/20 0.35
CA1 P00915 2/20 0.34
CA2 P00918 2/20 0.34
POLB P06746 1/20 0.34
KMT2A Q03164 2/20 0.33
KDM4E B2RXH2 2/20 0.33
LMNA P02545 1/20 0.33
GAA P10253 1/20 0.33
ALDH1A1 P00352 2/20 0.33
L3MBTL1 Q9Y468 2/20 0.33
MEN1 O00255 1/20 0.33
ATM Q13315 1/20 0.33
MAPT P10636 1/20 0.32
CYP3A4 P08684 1/20 0.32
CYP2C9 P11712 1/20 0.32
CYP2C19 P33261 1/20 0.32
PDK1 Q15118 2/20 0.31
PDK2 Q15119 2/20 0.31
PDK3 Q15120 2/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13015787 0.84 KDM4E (0.34) TSHRHPGDCA1CA2POLB
SCHEMBL17679448 0.83 LMNA (0.43) TSHRKDM4ELMNAALDH1A1L3MBTL1
SCHEMBL16099302 0.79 TSHR (0.36) TSHRHPGDCA1CA2POLB
SCHEMBL18572512 0.75 TSHR (0.35) TSHRHPGDCA1CA2POLB
SCHEMBL12452723 0.75 TSHR (0.33) TSHRHPGDCA1CA2POLB
SCHEMBL2386131 0.74 CA2 (0.33) CA1CA2
SCHEMBL12256403 0.73 CA1 (0.39) TSHRHPGDCA1CA2POLB
SCHEMBL11890222 0.72 CA1 (0.31) TSHRCA1CA2KMT2A
SCHEMBL4277869 0.70 L3MBTL1 (0.47) TSHRHPGDCA1CA2POLB
SCHEMBL17036719 0.69 TSHR (0.36) TSHRHPGDCA1CA2POLB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20170059992-A1 RESIST PATTERN-FORMING METHOD AND CHEMICALLY AMPLIFIED RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2017-03-02 US disclosed
US-9291904-B2 Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method FUJIFILM CORPORATION (JP) 2016-03-22 US disclosed
US-9250530-B2 2016-02-02 US disclosed
US-9023579-B2 Actinic-ray- or radiation-sensitive resin composition, compound and method of forming pattern using the composition FUJIFILM CORPORATION (JP) 2015-05-05 US disclosed
US-20150079522-A1 PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2015-03-19 US disclosed
US-8951718-B2 Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method FUJIFILM CORPORATION (JP) 2015-02-10 US disclosed
US-20120315449-A1 PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2012-12-13 US disclosed
US-20120237874-A1 Actinic-Ray- or Radiation-Sensitive Resin Composition, Compound and Method of Forming Pattern Using the Composition FUJIFILM CORPORATION (JP) 2012-09-20 US disclosed
US-20120058436-A1 PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2012-03-08 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20120237874-A1 Actinic-Ray- or Radiation-Sensitive Resin Composition, Compound and Method of Forming Pattern Using the Composition RER1, RXRA, XRN2 TSHR 1934/4885HPGD 2692/4885CA1 326/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.