SCHEMBL17679449

SCHEMBL17679449

O=[SH](=O)NS(=O)(=O)c1cc(C(F)(F)F)cc(C(F)(F)F)c1

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA1 P00915 2/20 0.42
CA2 P00918 2/20 0.42
MMP1 P03956 1/20 0.42
MMP2 P08253 1/20 0.42
MMP9 P14780 1/20 0.42
MMP8 P22894 1/20 0.42
MMP13 P45452 1/20 0.42
GAA P10253 2/20 0.42
CES2 O00748 1/20 0.41
PSEN1 P49768 6/20 0.40
PSEN2 P49810 6/20 0.40
APH1B Q8WW43 6/20 0.40
NCSTN Q92542 6/20 0.40
APH1A Q96BI3 6/20 0.40
PSENEN Q9NZ42 6/20 0.40
CYP2D6 P10635 5/20 0.40
TDP1 Q9NUW8 1/20 0.40
CYP3A4 P08684 3/20 0.38
ACP1 P24666 1/20 0.37
GPBAR1 Q8TDU6 2/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13623382 0.79 CA1 (0.47) CA1CA2MMP1MMP2MMP9
SCHEMBL31027115 0.76 CYP1A2 (0.46) CA1CA2MMP1MMP2MMP9
SCHEMBL12054700 0.76 CA1 (0.44) CA1CA2MMP1MMP2MMP9
SCHEMBL15880574 0.76 CA1 (0.68) CA1CA2MMP1MMP2MMP9
SCHEMBL3458223 0.76 KIF11 (0.47) CA1CA2MMP1MMP2MMP9
SCHEMBL15761593 0.74 PPARG (0.58) PSEN1PSEN2APH1BNCSTNAPH1A
SCHEMBL111996 0.73 CA1 (0.42) CA1CA2MMP1MMP2MMP9
SCHEMBL29213152 0.73 SMN1; SMN2 (0.49) CA1CA2MMP1MMP2MMP9
SCHEMBL12386319 0.73 PSEN1 (0.43) CA1CA2MMP1MMP2MMP9
SCHEMBL3507443 0.72 CES2 (0.52) CA1CA2MMP1MMP2MMP9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9465298-B2 Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method FUJIFILM CORPORATION (JP) 2016-10-11 US disclosed
US-9465298-B2 Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method FUJIFILM CORPORATION (JP) 2016-10-11 US disclosed
US-20160103395-A1 PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2016-04-14 US disclosed
US-20160103395-A1 PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2016-04-14 US disclosed