SCHEMBL1773644

SCHEMBL1773644

CC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)F

nearest known ligand 0.34

Predicted protein targets (top 7)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 1/20 0.34
TSHR P16473 1/20 0.34
TDP1 Q9NUW8 1/20 0.34
CYP1A2 P05177 1/20 0.30
CYP2C9 P11712 1/20 0.30
CYP2C19 P33261 1/20 0.30
RECQL P46063 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1772081 1.00 KDM4E (0.34) KDM4ETSHRTDP1CYP1A2CYP2C9
SCHEMBL1772592 1.00 KDM4E (0.34) KDM4ETSHRTDP1CYP1A2CYP2C9
SCHEMBL1773122 1.00 KDM4E (0.34) KDM4ETSHRTDP1CYP1A2CYP2C9
SCHEMBL525839 0.97 KDM4E (0.36) KDM4ETSHRTDP1
SCHEMBL525110 0.88 KDM4E (0.37) KDM4ETSHRTDP1
Iodide SCHEMBL7635296 0.85 KDM4E (0.36) KDM4ETSHRTDP1
SCHEMBL5487202 0.84 TSHR (0.42) KDM4ETSHRTDP1CYP1A2CYP2C9
SCHEMBL1824897 0.84 TSHR (0.42) KDM4ETSHRTDP1CYP1A2CYP2C9
SCHEMBL1827978 0.84 TSHR (0.42) KDM4ETSHRTDP1CYP1A2CYP2C9
SCHEMBL5489726 0.84 TSHR (0.42) KDM4ETSHRTDP1CYP1A2CYP2C9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9029067-B2 Resin composition for making resist pattern insoluble, and method for formation of resist pattern by using the same JSR CORPORATION (JP) 2015-05-12 US disclosed
US-20150004547-A1 RESIN COMPOSITION FOR MAKING RESIST PATTERN INSOLUBLE, AND METHOD FOR FORMATION OF RESIST PATTERN BY USING THE SAME JSR CORPORATION (JP) 2015-01-01 US disclosed
US-20140363773-A1 PATTERN-FORMING METHOD JSR CORPORATION (JP) 2014-12-11 US disclosed
US-8877429-B2 Resin composition for making resist pattern insoluble, and method for formation of resist pattern by using the same JSR CORPORATION (JP) 2014-11-04 US disclosed
US-20120244478-A1 RESIST PATTERN FORMATION METHOD JSR CORPORATION (JP) 2012-09-27 US disclosed
US-8211624-B2 Method for pattern formation and resin composition for use in the method JSR CORPORATION (JP) 2012-07-03 US disclosed
US-20120156621-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2012-06-21 US disclosed
EP-2378362-A1 RESIST PATTERN COATING AGENT AND RESIST PATTERN FORMING METHOD USING THE SAME JSR Corporation (JP) 2011-10-19 EP disclosed
US-20110223544-A1 RESIST PATTERN COATING AGENT AND RESIST PATTERN FORMING METHOD USING THE SAME JSR CORPORATION (JP) 2011-09-15 US disclosed
US-20110123936-A1 RESIST PATTERN COATING AGENT AND RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2011-05-26 US disclosed
US-20110111349-A1 RESIN COMPOSITION FOR MAKING RESIST PATTERN INSOLUBLE, AND METHOD FOR FORMATION OF RESIST PATTERN BY USING THE SAME JSR CORPORATION (JP) 2011-05-12 US disclosed
US-20100323292-A1 RESIST PATTERN FORMATION METHOD, AND RESIN COMPOSITION CAPABLE OF INSOLUBILIZING RESIST PATTERN JSR CORPORATION (JP) 2010-12-23 US disclosed
US-20100190104-A1 METHOD FOR PATTERN FORMATION AND RESIN COMPOSITION FOR USE IN THE METHOD JSR CORPORATION (JP) 2010-07-29 US disclosed
EP-2128706-A1 RESIST PATTERN FORMATION METHOD, AND RESIN COMPOSITION CAPABLE OF INSOLUBILIZING RESIST PATTERN JSR Corporation (JP) 2009-12-02 EP disclosed