SCHEMBL17736491

SCHEMBL17736491

CC(C)(C)C(=O)/C(=N\OS(=O)(=O)CC1(C)C2CCC1C(=O)C2)c1nc2ccccc2s1

nearest known ligand 0.35

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ ALDH1A1 P00352 7/20 0.35
▸ TSHR P16473 2/20 0.35
▸ ALOX15 P16050 1/20 0.35
▸ CASP1 P29466 1/20 0.35
▸ LMNA P02545 1/20 0.35
▸ L3MBTL1 Q9Y468 1/20 0.35
▸ CHRNA7 P36544 2/20 0.35
▸ HTR1A P08908 2/20 0.34
▸ DRD2 P14416 2/20 0.34
▸ HTR2A P28223 2/20 0.34
▸ SLC6A4 P31645 2/20 0.34
▸ HTR7 P34969 2/20 0.34
▸ CNR1 P21554 2/20 0.33
▸ SLC6A2 P23975 1/20 0.33
▸ HTR2C P28335 1/20 0.33
▸ HRH1 P35367 1/20 0.33
▸ SMN1; SMN2 Q16637 3/20 0.33
▸ MAOB P27338 1/20 0.33
▸ MEN1 O00255 3/20 0.32
▸ KMT2A Q03164 3/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17736505 0.82 CYP1A2 (0.42) ALDH1A1TSHRL3MBTL1SMN1; SMN2MEN1
SCHEMBL18212184 0.73 ALDH1A1 (0.46) ALDH1A1TSHRALOX15CASP1LMNA
SCHEMBL17736496 0.72 CNR1 (0.48) ALDH1A1TSHRALOX15CASP1LMNA
SCHEMBL17736485 0.71 CNR1 (0.42) ALDH1A1TSHRALOX15CASP1LMNA
SCHEMBL16381778 0.71 MAPT (0.44) ALDH1A1TSHRALOX15CASP1LMNA
SCHEMBL17736484 0.67 MAOB (0.40) ALDH1A1TSHRALOX15CASP1LMNA
SCHEMBL17341919 0.66 MAOB (0.44) ALDH1A1TSHRALOX15CASP1LMNA
SCHEMBL17736492 0.66 CNR1 (0.40) ALDH1A1TSHRALOX15CASP1LMNA
SCHEMBL17341917 0.65 SMN1; SMN2 (0.50) ALDH1A1TSHRALOX15CASP1LMNA
SCHEMBL17736488 0.65 TSHR (0.44) ALDH1A1TSHRALOX15CASP1LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20160131976-A1 RESIST COMPOSITION FOR SEMICONDUCTOR MANUFACTURING PROCESS; RESIST FILM, RESIST-COATED MASK BLANKS, PHOTOMASK, AND RESIST PATTERNING METHOD USING SAID RESIST COMPOSITION; ELECTRONIC-DEVICE MANUFACTURING METHOD; AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-05-12 — — US disclosed
US-20160131976-A1 RESIST COMPOSITION FOR SEMICONDUCTOR MANUFACTURING PROCESS; RESIST FILM, RESIST-COATED MASK BLANKS, PHOTOMASK, AND RESIST PATTERNING METHOD USING SAID RESIST COMPOSITION; ELECTRONIC-DEVICE MANUFACTURING METHOD; AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-05-12 — — US disclosed
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