SCHEMBL17736484

SCHEMBL17736484

CC(C)(C)C(=O)/C(=N\OS(=O)(=O)c1c(C2CCCCC2)cc(C2CCCCC2)cc1C1CCCCC1)c1nc2ccccc2s1

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ MAOB P27338 2/20 0.40
▸ CNR1 P21554 2/20 0.39
▸ ALOX15 P16050 1/20 0.39
▸ TSHR P16473 1/20 0.39
▸ CASP1 P29466 1/20 0.39
▸ HTR1A P08908 2/20 0.37
▸ DRD2 P14416 2/20 0.37
▸ HTR2A P28223 2/20 0.37
▸ SLC6A4 P31645 2/20 0.37
▸ HTR7 P34969 2/20 0.37
▸ RBP4 P02753 1/20 0.37
▸ CNR2 P34972 1/20 0.36
▸ ALDH1A1 P00352 3/20 0.36
▸ LMNA P02545 2/20 0.36
▸ SLC6A2 P23975 1/20 0.36
▸ HTR2C P28335 1/20 0.36
▸ HRH1 P35367 1/20 0.36
▸ L3MBTL1 Q9Y468 1/20 0.36
▸ FAAH O00519 1/20 0.35
▸ PDE2A O00408 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17736514 0.91 MAOB (0.31) MAOBMAOA
SCHEMBL17736498 0.83 FAAH (0.39) RBP4LMNAFAAHNPC1RAB9A
SCHEMBL18212184 0.77 ALDH1A1 (0.46) ALOX15TSHRCASP1ALDH1A1LMNA
SCHEMBL17736488 0.76 TSHR (0.44) ALOX15TSHRCASP1ALDH1A1LMNA
SCHEMBL17736516 0.76 NPY5R (0.32) —
SCHEMBL16381778 0.75 MAPT (0.44) ALOX15TSHRCASP1ALDH1A1LMNA
SCHEMBL17341919 0.73 MAOB (0.44) MAOBCNR1ALOX15TSHRCASP1
SCHEMBL17736496 0.72 CNR1 (0.48) MAOBCNR1ALOX15TSHRCASP1
SCHEMBL17736504 0.70 FAAH (0.40) RBP4ALDH1A1L3MBTL1FAAHMEN1
SCHEMBL17341897 0.70 SMN1; SMN2 (0.49) MAOBALOX15TSHRCASP1RBP4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20160131976-A1 RESIST COMPOSITION FOR SEMICONDUCTOR MANUFACTURING PROCESS; RESIST FILM, RESIST-COATED MASK BLANKS, PHOTOMASK, AND RESIST PATTERNING METHOD USING SAID RESIST COMPOSITION; ELECTRONIC-DEVICE MANUFACTURING METHOD; AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-05-12 — — US disclosed
US-20160131976-A1 RESIST COMPOSITION FOR SEMICONDUCTOR MANUFACTURING PROCESS; RESIST FILM, RESIST-COATED MASK BLANKS, PHOTOMASK, AND RESIST PATTERNING METHOD USING SAID RESIST COMPOSITION; ELECTRONIC-DEVICE MANUFACTURING METHOD; AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-05-12 — — US disclosed
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