⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL276455 | 0.69 | PIK3CD (0.35) | — | |
| SCHEMBL178547 | 0.67 | — | — | |
| SCHEMBL28382008 | 0.64 | — | — | |
| SCHEMBL22388730 | 0.64 | — | — | |
| SCHEMBL458834 | 0.64 | — | — | |
| SCHEMBL2921685 | 0.64 | — | — | |
| SCHEMBL3184787 | 0.64 | — | — | |
| SCHEMBL3489137 | 0.64 | — | — | |
| SCHEMBL104118 | 0.64 | PIK3CD (0.32) | — | |
| SCHEMBL11930073 | 0.64 | PIK3CD (0.32) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 23 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7517750-B2 | Flash memory devices having multilayered inter-gate dielectric layers including metal oxide layers and methods of manufacturing the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2009-04-14 | — | — | US | claimed |
| CN-116065138-A | Spray unit and deposition apparatus including the same | 三星显示有限公司 | 2023-05-05 | — | — | CN | disclosed |
| CN-217628613-U | Spray unit and deposition apparatus | 三星显示有限公司 | 2022-10-21 | — | — | CN | disclosed |
| EP-3151286-B1 | SOLAR CELL ELEMENT, METHOD FOR MANUFACTURING SAME AND SOLAR CELL MODULE | KYOCERA CORP (JP) | 2021-12-08 | — | — | EP | disclosed |
| US-9941114-B2 | Organometallic precursors and methods of forming thin layers using the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2018-04-10 | — | — | US | disclosed |
| US-9893142-B2 | Method for manufacturing semiconductor device | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2018-02-13 | — | — | US | disclosed |
| US-20180002808-A1 | GAS SUPPLY UNIT AND THIN FILM DEPOSITION APPARATUS INCLUDING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2018-01-04 | — | — | US | disclosed |
| EP-3151286-A1 | SOLAR CELL ELEMENT, METHOD FOR MANUFACTURING SAME AND SOLAR CELL MODULE | Kyocera Corporation (JP) | 2017-04-05 | — | — | EP | disclosed |
| US-20170077321-A1 | SOLAR CELL ELEMENT, METHOD FOR MANUFACTURING SOLAR CELL ELEMENT AND SOLAR CELL MODULE | KYOCERA CORPORATION (JP) | 2017-03-16 | — | — | US | disclosed |
| US-20170018604-A1 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2017-01-19 | — | — | US | disclosed |
| US-20100255651-A1 | SEMICONDUCTOR DEVICE COMPRISING MULTILAYER DIELECTRIC FILM AND RELATED METHOD | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2010-10-07 | — | — | US | disclosed |
| US-7799631-B2 | Multiple-layer dielectric layer and method for fabricating capacitor including the same | HYNIX SEMICONDUCTOR INC. (KR) | 2010-09-21 | — | — | US | disclosed |
| US-20100009508-A1 | Methods of fabricating stack type capacitors of semiconductor devices | SAMSUNG ELECTRONICS CO., LTD. | 2010-01-14 | — | — | US | disclosed |
| US-20080203529-A1 | SEMICONDUCTOR DEVICE COMPRISING MULTILAYER DIELECTRIC FILM AND RELATED METHOD | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2008-08-28 | — | — | US | disclosed |
| US-20080160712-A1 | MULTIPLE-LAYER DIELECTRIC LAYER AND METHOD FOR FABRICATING CAPACITOR INCLUDING THE SAME | HYNIX SEMICONDUCTOR INC. (KR) | 2008-07-03 | — | — | US | disclosed |
| US-20080081409-A1 | Method of Manufacturing Memory Device | SAMSUNG ELECTRONICS CO., LTD (KR) | 2008-04-03 | — | — | US | disclosed |
| US-7087495-B2 | Method for manufacturing semiconductor device | RENESAS TECHNOLOGY CORP. (JP) | 2006-08-08 | — | — | US | disclosed |
| US-20060121671-A1 | Semiconductor device and manufacturing process therefor | NEC ELECTRONICS CORPORATION (JP) | 2006-06-08 | — | — | US | disclosed |
| US-20040217478-A1 | Semiconductor device and manufacturing process therefor | NEC ELECTRONICS CORPORATION (JP) | 2004-11-04 | — | — | US | disclosed |
| US-20040191997-A1 | Method for manufacturing semiconductor device | SEMICONDUCTOR LEADING EDGE TECHNOLOGIES, INC. (JP) | 2004-09-30 | — | — | US | disclosed |