Predicted protein targets (top 11)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ELANE | P08246 | 6/20 | 0.42 |
| ▸ | LMNA | P02545 | 1/20 | 0.38 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.38 |
| ▸ | CA2 | P00918 | 4/20 | 0.36 |
| ▸ | NPC1 | O15118 | 1/20 | 0.35 |
| ▸ | POLB | P06746 | 1/20 | 0.35 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.35 |
| ▸ | RAB9A | P51151 | 1/20 | 0.35 |
| ▸ | ESR1 | P03372 | 1/20 | 0.34 |
| ▸ | ESR2 | Q92731 | 1/20 | 0.34 |
| ▸ | SCN9A | Q15858 | 1/20 | 0.34 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL15447051 | 0.89 | ELANE (0.50) | ELANELMNAL3MBTL1CA2ESR1 | |
| SCHEMBL21974046 | 0.87 | ELANE (0.38) | ELANELMNAL3MBTL1CA2SCN9A | |
| SCHEMBL14747377 | 0.86 | ELANE (0.51) | ELANEL3MBTL1 | |
| SCHEMBL15179679 | 0.86 | ELANE (0.40) | ELANELMNAL3MBTL1CA2NPC1 | |
| SCHEMBL15179687 | 0.83 | ELANE (0.39) | ELANELMNAL3MBTL1CA2POLB | |
| SCHEMBL119862 | 0.83 | ESR1 (0.48) | ELANELMNAL3MBTL1NPC1CYP2C9 | |
| SCHEMBL20408466 | 0.83 | AKR1C3 (0.47) | ELANELMNAL3MBTL1NPC1RAB9A | |
| SCHEMBL20408462 | 0.83 | ELANE (0.49) | ELANELMNACA2POLB | |
| SCHEMBL6742426 | 0.83 | KMT2A (0.50) | ELANEL3MBTL1NPC1RAB9AESR1 | |
| SCHEMBL18470653 | 0.82 | ELANE (0.44) | ELANELMNAL3MBTL1CA2ESR1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20180180998-A1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-06-28 | — | — | US | disclosed |
| US-9971245-B2 | Silicon-containing polymer, silicon-containing compound, composition for forming a resist under layer film, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-05-15 | — | — | US | disclosed |
| US-9904169-B2 | Photomask blank, resist pattern forming process, and method for making photomask | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-02-27 | — | — | US | disclosed |
| US-20180039175-A1 | NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-02-08 | — | — | US | disclosed |
| US-9740098-B2 | Chemically amplified negative resist composition using novel onium salt and resist pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-08-22 | — | — | US | disclosed |
| US-9645493-B2 | Negative resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-05-09 | — | — | US | disclosed |
| US-9632417-B2 | Shrink material and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-04-25 | — | — | US | disclosed |
| US-20160299431-A1 | PHOTOMASK BLANK, RESIST PATTERN FORMING PROCESS, AND METHOD FOR MAKING PHOTOMASK | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-10-13 | — | — | US | disclosed |
| US-20160299430-A1 | NEGATIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-10-13 | — | — | US | disclosed |
| US-20160299428-A1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION USING NOVEL ONIUM SALT AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-10-13 | — | — | US | disclosed |
| US-20160229939-A1 | SILICON-CONTAINING POLYMER, SILICON-CONTAINING COMPOUND, COMPOSITION FOR FORMING A RESIST UNDER LAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-08-11 | — | — | US | disclosed |
| US-20160161851-A1 | SHRINK MATERIAL AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-06-09 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20180180998-A1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SLC11A2, POLR2B, POLI | ELANE 2693/4885LMNA 1360/4885L3MBTL1 3572/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.