SCHEMBL17812664

SCHEMBL17812664

CCC(C)c1ccc(C(O)(CC)C2CC3CCC2C3)cc1

nearest known ligand 0.50

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
NPSR1 Q6W5P4 1/20 0.37
CYP19A1 P11511 1/20 0.36
KMT2A Q03164 3/20 0.34
MEN1 O00255 2/20 0.34
NPC1 O15118 1/20 0.34
RAB9A P51151 1/20 0.34
LMNA P02545 1/20 0.32
TP53 P04637 1/20 0.32
MAPT P10636 1/20 0.32
SMN1; SMN2 Q16637 1/20 0.32
CYP2C9 P11712 1/20 0.31
ALDH1A1 P00352 1/20 0.31
TSHR P16473 1/20 0.31
POLB P06746 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17812629 0.85 NPSR1 (0.38) NPSR1CYP19A1KMT2AMEN1NPC1
SCHEMBL18905355 0.83 CYP19A1 (0.39) CYP19A1NPC1RAB9AMAPTALDH1A1
SCHEMBL17812635 0.77 CYP19A1 (0.33) NPSR1CYP19A1KMT2AMEN1NPC1
SCHEMBL17812781 0.76 KMT2A (0.43) NPSR1KMT2AMEN1TP53CYP2C9
SCHEMBL17812628 0.75 KMT2A (0.45) NPSR1KMT2AMEN1TP53MAPT
SCHEMBL13918201 0.74 ALDH1A1 (0.37) NPSR1KMT2AMEN1NPC1RAB9A
SCHEMBL18014638 0.68 ALDH1A1 (0.42) NPSR1KMT2AMEN1MAPTCYP2C9
SCHEMBL17812779 0.68 NPSR1 (0.36) NPSR1KMT2AMEN1CYP2C9ALDH1A1
SCHEMBL14665260 0.68 NPC1 (0.47) NPSR1KMT2AMEN1NPC1RAB9A
SCHEMBL13934892 0.67 RORC (0.43) NPSR1KMT2AMEN1MAPTCYP2C9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9971245-B2 Silicon-containing polymer, silicon-containing compound, composition for forming a resist under layer film, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-05-15 US disclosed
US-9904172-B2 Shrink material and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-27 US disclosed
US-20160229939-A1 SILICON-CONTAINING POLYMER, SILICON-CONTAINING COMPOUND, COMPOSITION FOR FORMING A RESIST UNDER LAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-08-11 US disclosed
US-20160161850-A1 SHRINK MATERIAL AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-06-09 US disclosed