SCHEMBL17812748

SCHEMBL17812748

CCC(C)c1ccc(C(C)(O)C23CC4CC(CC(C4)C2)C3)cc1

nearest known ligand 0.41

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 2/20 0.38
MEN1 O00255 1/20 0.38
NPSR1 Q6W5P4 1/20 0.37
RORC P51449 1/20 0.35
TSHR P16473 2/20 0.33
ALDH1A1 P00352 2/20 0.33
CYP2C9 P11712 1/20 0.33
USP2 O75604 1/20 0.33
GAA P10253 1/20 0.33
PKM P14618 1/20 0.33
HPGD P15428 1/20 0.33
ALOX15 P16050 1/20 0.33
HSD17B10 Q99714 1/20 0.33
EPHX2 P34913 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17812620 0.87 HSD17B10 (0.34) KMT2AMEN1NPSR1RORCALDH1A1
SCHEMBL17812779 0.84 NPSR1 (0.36) KMT2AMEN1NPSR1TSHRALDH1A1
SCHEMBL18905476 0.79 MEN1 (0.34) KMT2AMEN1
SCHEMBL18911068 0.77 TSHR (0.39) KMT2AMEN1NPSR1TSHRALDH1A1
SCHEMBL18911192 0.77 MAPK1 (0.35) KMT2AMEN1NPSR1ALDH1A1EPHX2
SCHEMBL15179715 0.76 MEN1 (0.34) KMT2AMEN1NPSR1RORCTSHR
SCHEMBL13918202 0.76 ALDH1A1 (0.38) KMT2AMEN1NPSR1TSHRALDH1A1
SCHEMBL18911194 0.75 CNR2 (0.49) KMT2AMEN1TSHRALDH1A1HPGD
SCHEMBL14335985 0.75 P2RX7 (0.38) KMT2AMEN1ALDH1A1EPHX2
SCHEMBL31010426 0.75 CYP3A4 (0.38) ALDH1A1HPGDALOX15EPHX2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9971245-B2 Silicon-containing polymer, silicon-containing compound, composition for forming a resist under layer film, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-05-15 US disclosed
US-9904172-B2 Shrink material and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-27 US disclosed
US-20160229939-A1 SILICON-CONTAINING POLYMER, SILICON-CONTAINING COMPOUND, COMPOSITION FOR FORMING A RESIST UNDER LAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-08-11 US disclosed
US-20160161850-A1 SHRINK MATERIAL AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-06-09 US disclosed