SCHEMBL17829503

SCHEMBL17829503

C=C(C)C(=O)NC12CC3CC(CC(CO)(C3)C1)C2

nearest known ligand 0.47

Predicted protein targets (top 8)

geneUniProtsupporting neighboursconfidence
TSHR P16473 1/20 0.40
ALDH1A1 P00352 2/20 0.38
EPHX2 P34913 4/20 0.36
EPHX1 P07099 2/20 0.36
GAA P10253 1/20 0.36
KMT2A Q03164 2/20 0.36
SMN1; SMN2 Q16637 1/20 0.36
MEN1 O00255 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6560547 0.86 TSHR (0.47) TSHREPHX2EPHX1GAAKMT2A
SCHEMBL6058526 0.84 ALDH1A1 (0.44) TSHRALDH1A1EPHX2EPHX1GAA
SCHEMBL12783362 0.80 TSHR (0.43) TSHRALDH1A1EPHX2EPHX1GAA
SCHEMBL14786478 0.80 TSHR (0.41) TSHRALDH1A1EPHX2EPHX1GAA
SCHEMBL584409 0.79 EPHX2 (0.57) EPHX2EPHX1GAAKMT2ASMN1; SMN2
SCHEMBL6227525 0.79 TSHR (0.42) TSHRALDH1A1EPHX2EPHX1GAA
Methacrylic Acid SCHEMBL736153 0.78 GAA (0.46) TSHRALDH1A1GAAKMT2AMEN1
SCHEMBL6560165 0.76 EPHX2 (0.39) TSHREPHX2EPHX1GAA
SCHEMBL16244109 0.74 MEN1 (0.51) TSHRALDH1A1EPHX2KMT2AMEN1
SCHEMBL11250557 0.72 PKM (0.50) TSHRALDH1A1EPHX2EPHX1KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10457761-B2 Polymer, resist composition, and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-10-29 US disclosed
US-10191373-B2 Method for producing polymer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-01-29 US disclosed
US-20170226250-A1 POLYMER, RESIST COMPOSITION, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-08-10 US disclosed
US-20170226250-A1 POLYMER, RESIST COMPOSITION, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-08-10 US disclosed
US-20170097567-A1 METHOD FOR PRODUCING POLYMER SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-04-06 US disclosed
US-20170097567-A1 METHOD FOR PRODUCING POLYMER SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-04-06 US disclosed
US-20160229940-A1 POLYMER, RESIST COMPOSITION, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-08-11 US disclosed
US-20160229940-A1 POLYMER, RESIST COMPOSITION, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-08-11 US disclosed
US-20160168296-A1 POLYMER, RESIST COMPOSITION, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-06-16 US disclosed
US-20160168296-A1 POLYMER, RESIST COMPOSITION, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-06-16 US disclosed