SCHEMBL178330

SCHEMBL178330

O=S(=O)(O/N=C(/c1ccc2c(c1)Cc1ccccc1-2)C(F)(F)F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SRD5A2 P31213 2/20 0.42
HTR2C P28335 3/20 0.40
DRD2 P14416 3/20 0.40
HTR2B P41595 2/20 0.40
HTR2A P28223 2/20 0.40
ADRA1D P25100 1/20 0.40
HTR7 P34969 1/20 0.40
ADRA1A P35348 1/20 0.40
ADRA1B P35368 1/20 0.40
MAPT P10636 5/20 0.36
KDM4E B2RXH2 4/20 0.36
ALDH1A1 P00352 4/20 0.36
HPGD P15428 3/20 0.36
L3MBTL1 Q9Y468 1/20 0.35
SMN1; SMN2 Q16637 3/20 0.33
NPSR1 Q6W5P4 2/20 0.33
LMNA P02545 3/20 0.33
GAA P10253 1/20 0.33
HSD17B10 Q99714 1/20 0.33
MCHR1 Q99705 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12352790 1.00 SRD5A2 (0.42) SRD5A2HTR2CDRD2HTR2BHTR2A
SCHEMBL20368725 0.94 SRD5A2 (0.42) SRD5A2HTR2CDRD2HTR2BHTR2A
SCHEMBL13262372 0.94 SRD5A2 (0.42) SRD5A2HTR2CDRD2HTR2BHTR2A
SCHEMBL327370 0.94 SRD5A2 (0.42) SRD5A2HTR2CDRD2HTR2BHTR2A
SCHEMBL1122055 0.94 SRD5A2 (0.42) SRD5A2HTR2CDRD2HTR2BHTR2A
SCHEMBL20368726 0.94 SRD5A2 (0.42) SRD5A2HTR2CDRD2HTR2BHTR2A
SCHEMBL12618690 0.89 SRD5A2 (0.37) SRD5A2HTR2CDRD2HTR2BHTR2A
SCHEMBL14674423 0.89 SRD5A2 (0.39) SRD5A2HTR2CDRD2HTR2BHTR2A
SCHEMBL14674424 0.89 SRD5A2 (0.39) SRD5A2HTR2CDRD2HTR2BHTR2A
SCHEMBL383954 0.88 SRD5A2 (0.38) SRD5A2HTR2CDRD2HTR2BHTR2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 174 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9523913-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2016-12-20 US disclosed
US-9523913-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2016-12-20 US disclosed
US-9513547-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2016-12-06 US disclosed
US-9513547-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2016-12-06 US disclosed
US-9285679-B2 Actinic ray-sensitive or radiation-sensitive composition, and resist film, resist-coated mask blanks, resist pattern forming method and photomask each using the composition FUJIFILM CORPORATION (JP) 2016-03-15 US disclosed
US-9223208-B2 Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition FUJIFILM CORPORATION (JP) 2015-12-29 US disclosed
US-9223208-B2 Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition FUJIFILM CORPORATION (JP) 2015-12-29 US disclosed
US-20150253662-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING PATTERN, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-09-10 US disclosed
US-20150253662-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING PATTERN, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-09-10 US disclosed
US-9128376-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2015-09-08 US disclosed
EP-1975715-A2 Positive resist composition and pattern forming method using the same FUJIFILM Corporation (JP) 2008-10-01 EP disclosed
US-20080227025-A1 Localized on resist film; peak area of a high molecular weight; flowability of immersion liquid in patterning by exposure; prevention of coating and development defects; resin has perfluoroalkyl, fluorinated alcohol, alkylsilyl structure, cyclic siloxane, sulfonimido and/or bis(carbonyl)methylene groups FUJIFILM CORPORATION (JP) 2008-09-18 US disclosed
US-20080220371-A1 PHOTOSENSITIVE COMPOSITION, COMPOUND USED FOR PHOTOSENSITIVE COMPOSITION AND PATTERN-FORMING METHOD USING PHOTOSENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2008-09-11 US disclosed
US-20080206669-A1 POSITIVE WORKING RESIST COMPOSITION AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2008-08-28 US disclosed
US-20080206668-A1 NEGATIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-08-28 US disclosed
US-20080187860-A1 PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2008-08-07 US disclosed
US-20080187863-A1 POSITIVE PHOTOSENSITIVE COMPOSITION, POLYMER COMPOUND USED FOR THE POSITIVE PHOTOSENSITIVE COMPOSITION, PRODUCTION METHOD OF THE POLYMER COMPOUND, AND PATTERN FORMING METHOD USING THE POSITIVE PHOTOSENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2008-08-07 US disclosed
US-20080138742-A1 PHOTOSENSITIVE COMPOSITION, COMPOUND FOR USE IN THE PHOTOSENSITIVE COMPOSITION AND PATTERN FORMING METHOD USING THE PHOTOSENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2008-06-12 US disclosed
US-7368220-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2008-05-06 US disclosed
US-20080085464-A1 POSITIVE PHOTOSENSITIVE COMPOSITION, POLYMER COMPOUNDS FOR USE IN THE POSITIVE PHOTOSENSITIVE COMPOSITION, MANUFACTURING METHOD OF THE POLYMER COMPOUNDS, COMPOUNDS FOR USE IN THE MANUFACTURE OF THE POLYMER COMPOUNDS, AND PATTERN-FORMING METHOD USING THE POSITIVE PHOTOSENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2008-04-10 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20080220371-A1 PHOTOSENSITIVE COMPOSITION, COMPOUND USED FOR PHOTOSENSITIVE COMPOSITION AND PATTERN-FORMING METHOD USING PHOTOSENSITIVE COMPOSITION RARA, RARB, RARG SRD5A2 2083/4885HTR2C 4772/4885DRD2 2906/4885
US-20080138742-A1 PHOTOSENSITIVE COMPOSITION, COMPOUND FOR USE IN THE PHOTOSENSITIVE COMPOSITION AND PATTERN FORMING METHOD USING THE PHOTOSENSITIVE COMPOSITION PAH, TRPA1, TYR SRD5A2 2032/4885HTR2C 1734/4885DRD2 1559/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.