Predicted protein targets (top 19)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | PLA2G4B | P0C869 | 2/20 | 0.42 |
| ▸ | GAA | P10253 | 3/20 | 0.40 |
| ▸ | TSHR | P16473 | 2/20 | 0.40 |
| ▸ | L3MBTL1 | Q9Y468 | 2/20 | 0.40 |
| ▸ | RAB9A | P51151 | 2/20 | 0.40 |
| ▸ | TP53 | P04637 | 2/20 | 0.40 |
| ▸ | CA12 | O43570 | 3/20 | 0.38 |
| ▸ | CA1 | P00915 | 3/20 | 0.38 |
| ▸ | CA2 | P00918 | 3/20 | 0.38 |
| ▸ | CA9 | Q16790 | 3/20 | 0.38 |
| ▸ | CA7 | P43166 | 1/20 | 0.38 |
| ▸ | RARB | P10826 | 3/20 | 0.37 |
| ▸ | LMNA | P02545 | 2/20 | 0.37 |
| ▸ | NPC1 | O15118 | 1/20 | 0.37 |
| ▸ | MAPT | P10636 | 1/20 | 0.37 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.37 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.37 |
| ▸ | HTT | P42858 | 1/20 | 0.37 |
| ▸ | POLB | P06746 | 1/20 | 0.37 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL546644 | 1.00 | PLA2G4B (0.42) | PLA2G4BGAATSHRL3MBTL1RAB9A | |
| SCHEMBL14947458 | 1.00 | PLA2G4B (0.42) | PLA2G4BGAATSHRL3MBTL1RAB9A | |
| SCHEMBL546645 | 1.00 | PLA2G4B (0.42) | PLA2G4BGAATSHRL3MBTL1RAB9A | |
| SCHEMBL3215754 | 0.96 | PLA2G4B (0.42) | PLA2G4BGAATSHRL3MBTL1RAB9A | |
| SCHEMBL14556415 | 0.96 | L3MBTL1 (0.45) | PLA2G4BGAATSHRL3MBTL1RAB9A | |
| SCHEMBL13713469 | 0.95 | PLA2G4B (0.39) | PLA2G4BGAATSHRL3MBTL1RAB9A | |
| SCHEMBL12320630 | 0.95 | GAA (0.42) | PLA2G4BGAATSHRL3MBTL1RAB9A | |
| SCHEMBL11912056 | 0.95 | LMNA (0.39) | PLA2G4BGAATSHRL3MBTL1RAB9A | |
| SCHEMBL106335 | 0.95 | PLA2G4B (0.39) | PLA2G4BGAATSHRL3MBTL1RAB9A | |
| SCHEMBL2757712 | 0.94 | PLA2G4B (0.38) | PLA2G4BGAATSHRL3MBTL1RAB9A |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 737 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230375925-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, COMPOUND, AND RESIN | FUJIFILM CORPORATION (JP) | 2023-11-23 | — | — | US | disclosed |
| US-20230367210-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2023-11-16 | — | — | US | disclosed |
| US-11693321-B2 | Treatment liquid for manufacturing semiconductor, storage container storing treatment liquid for manufacturing semiconductor, pattern forming method, and method of manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2023-07-04 | — | — | US | disclosed |
| US-11656548-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, mask blank with resist film, method for producing photomask, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2023-05-23 | — | — | US | disclosed |
| US-20230132693-A1 | RINSING LIQUID AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2023-05-04 | — | — | US | disclosed |
| US-11640113-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, pattern forming method, and method of manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2023-05-02 | — | — | US | disclosed |
| US-11640110-B2 | Resin composition, method for producing heat-resistant resin film, and display device | TORAY INDUSTRIES, INC. (JP) | 2023-05-02 | — | — | US | disclosed |
| US-20230045851-A1 | METHOD FOR PRODUCING RESIST COMPOSITION AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2023-02-16 | — | — | US | disclosed |
| US-11573491-B2 | Negative tone photosensitive composition for EUV light, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2023-02-07 | — | — | US | disclosed |
| US-20230004086-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2023-01-05 | — | — | US | disclosed |
| US-20070049651-A1 | Curable composition, ink composition, inkjet recording method, printed material, method of producing planographic printing plate, planographic printing plate, and oxcetane compound | FUJI PHOTO FILM CO., LTD. | 2007-03-01 | — | — | US | disclosed |
| US-20070042290-A1 | resin containing acrylic ester monomers capable of increasing solubility in alkali developer by action of acid, acid generator, aryldicycloalkylsulfonium compounds, and nonionic surfactant; semiconductors, integrated circuits | FUJI PHOTO FILM CO., LTD. | 2007-02-22 | — | — | US | disclosed |
| US-20070042290-A1 | resin containing acrylic ester monomers capable of increasing solubility in alkali developer by action of acid, acid generator, aryldicycloalkylsulfonium compounds, and nonionic surfactant; semiconductors, integrated circuits | FUJI PHOTO FILM CO., LTD. | 2007-02-22 | — | — | US | disclosed |
| US-7179579-B2 | Radiation-sensitive composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-02-20 | — | — | US | disclosed |
| US-20070003871-A1 | Positive photosensitive composition | FUJI PHOTO FILM CO., LTD. | 2007-01-04 | — | — | US | disclosed |
| US-20070003871-A1 | Positive photosensitive composition | FUJI PHOTO FILM CO., LTD. | 2007-01-04 | — | — | US | disclosed |
| US-7157208-B2 | Positive resist composition and pattern forming method using the same | FUJI PHOTO FILM CO., LTD. (JP) | 2007-01-02 | — | — | US | disclosed |
| US-7157208-B2 | Positive resist composition and pattern forming method using the same | FUJI PHOTO FILM CO., LTD. (JP) | 2007-01-02 | — | — | US | disclosed |
| US-6929896-B2 | Onium salts and the use therof as latent acids | CIBA SPECIALTY CHEMICALS CORPORATION (US) | 2005-08-16 | — | — | US | disclosed |
| US-20040053158-A1 | Onium salts and the use therof as latent acids | CIBA SPECIALTY CHEMICALS CORP. | 2004-03-18 | — | — | US | disclosed |