SCHEMBL106335

SCHEMBL106335

CCCS(=O)(=O)O/N=C(/c1ccc(OCCCOc2ccc(/C(=N/OS(C)(=O)=O)C(F)(F)F)cc2)cc1)C(F)(F)F

nearest known ligand 0.39

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
PLA2G4B P0C869 2/20 0.39
CA12 O43570 3/20 0.38
CA1 P00915 3/20 0.38
CA2 P00918 3/20 0.38
CA9 Q16790 3/20 0.38
RAB9A P51151 3/20 0.36
TSHR P16473 2/20 0.36
L3MBTL1 Q9Y468 2/20 0.36
GAA P10253 2/20 0.36
TP53 P04637 2/20 0.36
PTGS2 P35354 1/20 0.35
CA7 P43166 1/20 0.35
NPC1 O15118 2/20 0.35
RARB P10826 3/20 0.34
LMNA P02545 2/20 0.34
MAPT P10636 1/20 0.34
ALOX15 P16050 1/20 0.34
HSD17B10 Q99714 1/20 0.34
HTT P42858 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL546644 0.95 PLA2G4B (0.42) PLA2G4BCA12CA1CA2CA9
SCHEMBL178355 0.95 PLA2G4B (0.42) PLA2G4BCA12CA1CA2CA9
SCHEMBL14947458 0.95 PLA2G4B (0.42) PLA2G4BCA12CA1CA2CA9
SCHEMBL546645 0.95 PLA2G4B (0.42) PLA2G4BCA12CA1CA2CA9
SCHEMBL15929681 0.95 FURIN (0.38) PLA2G4BCA12CA1CA2CA9
SCHEMBL3215754 0.92 PLA2G4B (0.42) PLA2G4BCA12CA1CA2CA9
SCHEMBL14556415 0.92 L3MBTL1 (0.45) PLA2G4BCA12CA1CA2CA9
SCHEMBL13713469 0.91 PLA2G4B (0.39) PLA2G4BCA12CA1CA2CA9
SCHEMBL12320630 0.91 GAA (0.42) PLA2G4BCA12CA1CA2CA9
SCHEMBL11912056 0.91 LMNA (0.39) PLA2G4BCA12CA1CA2CA9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 64 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9798235-B2 Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same FUJIFILM CORPORATION (JP) 2017-10-24 US disclosed
US-20170255098-A1 POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME FUJIFILM CORPORATION (JP) 2017-09-07 US disclosed
US-9703196-B2 Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same FUJIFILM CORPORATION (JP) 2017-07-11 US disclosed
US-9551935-B2 Pattern forming method and resist composition FUJIFILM CORPORATION (JP) 2017-01-24 US disclosed
US-20160370701-A1 POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME FUJIFILM CORPORATION (JP) 2016-12-22 US disclosed
US-9465292-B2 Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same FUJIFILM CORPORATION (JP) 2016-10-11 US disclosed
US-20160187780-A1 POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME FUJIFILM CORPORATION (JP) 2016-06-30 US disclosed
US-9316912-B2 Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same FUJIFILM CORPORATION (JP) 2016-04-19 US disclosed
US-9223219-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition and resist film FUJIFILM CORPORATION (JP) 2015-12-29 US disclosed
US-9152048-B2 Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition FUJIFILM CORPORATION (JP) 2015-10-06 US disclosed
US-20110143280-A1 POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2011-06-16 US disclosed
US-20110136062-A1 POSITIVE PHOTOSENSITIVE COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2011-06-09 US disclosed
US-20110091809-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2011-04-21 US disclosed
US-20110076622-A1 POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE AND PATTERN-FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2011-03-31 US disclosed
US-7888401-B2 Ink composition and inkjet ink, and image-forming method and recorded material using the same, and oxetane compound FUJIFILM CORPORATION (JP) 2011-02-15 US disclosed
US-20110027716-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, COMPOUND AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2011-02-03 US disclosed
US-20110008731-A1 ACTINIC-RAY-OR RADIATION-SENSITIVE RESIN COMPOSITION, COMPOUND AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2011-01-13 US disclosed
US-20100015554-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2010-01-21 US disclosed
EP-2065449-A2 Ink composition for inkjet recording, inkjet recording method, and printed material FUJIFILM Corporation (JP) 2009-06-03 EP disclosed
EP-1975212-A2 Ink composition, inkjet recording method, printed material, planographic printing plate, and method for forming planographic printing plate FUJIFILM Corporation (JP) 2008-10-01 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20110008731-A1 ACTINIC-RAY-OR RADIATION-SENSITIVE RESIN COMPOSITION, COMPOUND AND METHOD OF FORMING PATTERN USING THE COMPOSITION RER1, XRN2, RXRA PLA2G4B 2589/4885CA12 1529/4885CA1 435/4885
US-20170255098-A1 POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME POLR2H, POLQ, RXRA PLA2G4B 1077/4885CA12 2097/4885CA1 526/4885
US-20110027716-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, COMPOUND AND METHOD OF FORMING PATTERN USING THE COMPOSITION RER1, RXRA, XRN2 PLA2G4B 2605/4885CA12 1564/4885CA1 326/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.