Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CYP2D6 | P10635 | 2/20 | 0.50 |
| ▸ | CA1 | P00915 | 3/20 | 0.46 |
| ▸ | CA2 | P00918 | 1/20 | 0.46 |
| ▸ | CA4 | P22748 | 1/20 | 0.46 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.45 |
| ▸ | CA9 | Q16790 | 2/20 | 0.44 |
| ▸ | CYP2C19 | P33261 | 3/20 | 0.38 |
| ▸ | CYP3A4 | P08684 | 2/20 | 0.38 |
| ▸ | CASP1 | P29466 | 1/20 | 0.38 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.36 |
| ▸ | LMNA | P02545 | 1/20 | 0.36 |
| ▸ | TP53 | P04637 | 1/20 | 0.36 |
| ▸ | TSHR | P16473 | 1/20 | 0.36 |
| ▸ | NOS3 | P29474 | 1/20 | 0.32 |
| ▸ | NOS1 | P29475 | 1/20 | 0.32 |
| ▸ | NOS2 | P35228 | 1/20 | 0.32 |
| ▸ | FKBP4 | Q02790 | 3/20 | 0.32 |
| ▸ | SLC6A3 | Q01959 | 4/20 | 0.32 |
| ▸ | SLC6A4 | P31645 | 2/20 | 0.32 |
| ▸ | SLC6A2 | P23975 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL18268908 | 1.00 | CYP2D6 (0.50) | CYP2D6CA1CA2CA4KMT2A | |
| SCHEMBL2719598 | 0.98 | CYP2D6 (0.49) | CYP2D6CA1CA2CA4KMT2A | |
| SCHEMBL3822239 | 0.98 | CYP2D6 (0.49) | CYP2D6CA1CA2CA4KMT2A | |
| SCHEMBL547347 | 0.98 | CYP2D6 (0.49) | CYP2D6CA1CA2CA4KMT2A | |
| SCHEMBL15577086 | 0.98 | CYP2D6 (0.49) | CYP2D6CA1CA2CA4KMT2A | |
| SCHEMBL3821804 | 0.98 | CYP2D6 (0.49) | CYP2D6CA1CA2CA4KMT2A | |
| SCHEMBL29399931 | 0.98 | CYP2D6 (0.49) | CYP2D6CA1CA2CA4KMT2A | |
| SCHEMBL8846065 | 0.98 | CYP2D6 (0.49) | CYP2D6CA1CA2CA4KMT2A | |
| SCHEMBL1929278 | 0.93 | — | — | |
| SCHEMBL28939363 | 0.93 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 58 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9951163-B2 | (Meth)acrylate compound, (meth)acrylic copolymer and photosensitive resin composition containing same | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2018-04-24 | — | — | US | disclosed |
| US-20170351179-A1 | COMPOSITION FOR FORMING UPPER LAYER FILM, PATTERN FORMING METHOD USING THE SAME, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-12-07 | — | — | US | disclosed |
| US-9709891-B2 | Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition | FUJIFILM CORPORATION (JP) | 2017-07-18 | — | — | US | disclosed |
| US-9709892-B2 | Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the same | FUJIFILM CORPORATION (JP) | 2017-07-18 | — | — | US | disclosed |
| US-9612535-B2 | Pattern forming method, electron beam- or extreme ultraviolet-sensitive resin composition, resist film using the same, method of manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2017-04-04 | — | — | US | disclosed |
| US-20170038685-A1 | ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD, EACH USING COMPOSITION, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-02-09 | — | — | US | disclosed |
| US-9523913-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2016-12-20 | — | — | US | disclosed |
| US-20160347896-A1 | (METH)ACRYLATE COMPOUND, (METH)ACRYLIC COPOLYMER AND PHOTOSENSITIVE RESIN COMPOSITION CONTAINING SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2016-12-01 | — | — | US | disclosed |
| US-9454079-B2 | Actinic ray- or radiation-sensitive resin composition, actinic ray- or radiation-sensitive film and method of forming pattern | FUJIFILM CORPORATION (JP) | 2016-09-27 | — | — | US | disclosed |
| US-20160209746-A1 | ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE FILM, MASK BLANK PROVIDED WITH ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, ELECTRONIC DEVICE AND NOVEL COMPOUND | FUJIFILM CORPORATION (JP) | 2016-07-21 | — | — | US | disclosed |
| US-20100136479-A1 | POSITIVE PHOTOSENSITIVE COMPOSITION | FUJIFILM CORPORATION (JP) | 2010-06-03 | — | — | US | disclosed |
| US-7695891-B2 | Photosensitive composition, pattern forming method using the photosensitive composition and compound for use in the photosensitive composition | FUJIFILM CORPORATION (JP) | 2010-04-13 | — | — | US | disclosed |
| US-7635553-B2 | Pattern forming method and resist composition used therefor | FUJIFILM CORPORATION (JP) | 2009-12-22 | — | — | US | disclosed |
| US-20090042147-A1 | METHOD OF FORMING PATTERNS | FUJIFILM CORPORATION (JP) | 2009-02-12 | — | — | US | disclosed |
| US-7442490-B2 | Positive resist composition and pattern formation method using the positive resist composition | FUJIFILM CORPORATION (JP) | 2008-10-28 | — | — | US | disclosed |
| US-20080227025-A1 | Localized on resist film; peak area of a high molecular weight; flowability of immersion liquid in patterning by exposure; prevention of coating and development defects; resin has perfluoroalkyl, fluorinated alcohol, alkylsilyl structure, cyclic siloxane, sulfonimido and/or bis(carbonyl)methylene groups | FUJIFILM CORPORATION (JP) | 2008-09-18 | — | — | US | disclosed |
| US-20080081290-A1 | RESIST COMPOSITION, RESIN FOR USE IN THE RESIST COMPOSITION, COMPOUND FOR USE IN THE SYNTHESIS OF THE RESIN, AND PATTERN-FORMING METHOD USING THE RESIST COMPOSITION | FUJIFILM CORPORATION (JP) | 2008-04-03 | — | — | US | disclosed |
| US-20070082289-A1 | Photosensitive composition, pattern forming method using the photosensitive composition and compound for use in the photosensitive composition | FUJI PHOTO FILM CO., LTD. | 2007-04-12 | — | — | US | disclosed |
| US-20070077519-A1 | Pattern forming method and resist composition used therefor | FUJI PHOTO FILM CO., LTD. | 2007-04-05 | — | — | US | disclosed |
| EP-1739483-A2 | Positive photosensitive composition and pattern forming method using the same | Fuji Photo Film Co., Ltd. (JP) | 2007-01-03 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20160209746-A1 | ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE FILM, MASK BLANK PROVIDED WITH ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, ELECTRONIC DEVICE AND NOVEL COMPOUND | ERCC1, RER1, ECPAS | CYP2D6 3315/4885CA1 2452/4885CA2 3870/4885 |
| US-20160347896-A1 | (METH)ACRYLATE COMPOUND, (METH)ACRYLIC COPOLYMER AND PHOTOSENSITIVE RESIN COMPOSITION CONTAINING SAME | REV1, EEF1A1, EEF1A2 | CYP2D6 2874/4885CA1 4153/4885CA2 4211/4885 |
| US-20100136479-A1 | POSITIVE PHOTOSENSITIVE COMPOSITION | AFF1, F12, AFF2 | CYP2D6 3905/4885CA1 351/4885CA2 1009/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.