SCHEMBL1793159

SCHEMBL1793159

CCCCCCCCCCCC(N)OCC

nearest known ligand 0.54

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
OPRM1 P35372 1/20 0.54
SPHK1 Q9NYA1 2/20 0.45
TP53 P04637 2/20 0.43
CYP2D6 P10635 2/20 0.42
LMNA P02545 2/20 0.42
LAP3 P28838 2/20 0.42
PLA2G1B P04054 1/20 0.42
PLA2G2A P14555 1/20 0.42
GMNN O75496 1/20 0.42
POLB P06746 1/20 0.42
THPO P40225 1/20 0.42
MTOR P42345 1/20 0.42
BLM P54132 1/20 0.42
KDM4E B2RXH2 1/20 0.42
CYP1A2 P05177 1/20 0.42
CYP3A4 P08684 1/20 0.42
MAPT P10636 1/20 0.42
CETP P11597 1/20 0.42
HTT P42858 1/20 0.42
UBE2N P61088 1/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL11300003 1.00 OPRM1 (0.54) OPRM1SPHK1TP53CYP2D6LMNA
SCHEMBL9193047 1.00 OPRM1 (0.54) OPRM1SPHK1TP53CYP2D6LMNA
SCHEMBL11300360 1.00 OPRM1 (0.54) OPRM1SPHK1TP53CYP2D6LMNA
SCHEMBL1794453 1.00 OPRM1 (0.54) OPRM1SPHK1TP53CYP2D6LMNA
SCHEMBL9295913 1.00 OPRM1 (0.54) OPRM1SPHK1TP53CYP2D6LMNA
SCHEMBL11300888 1.00 OPRM1 (0.54) OPRM1SPHK1TP53CYP2D6LMNA
SCHEMBL11303488 0.98 OPRM1 (0.56) OPRM1SPHK1TP53CYP2D6LMNA
SCHEMBL3875953 0.90
SCHEMBL1792732 0.88 FAAH (0.44) OPRM1SPHK1TP53CYP2D6LMNA
SCHEMBL722493 0.84 DNM1 (0.52) OPRM1SPHK1TP53CYP2D6LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 31 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-118179482-A Vanadium-based catalyst for plasma synergistic catalytic denitration and preparation method and application thereof 北京化工大学 2024-06-14 CN claimed
CN-116791385-A Formula of high-strength plastic rope and production method thereof 界首市宏利塑料股份有限公司 2023-09-22 CN claimed
US-20100155108-A1 Electroless nickel plating solution composition, flexible printed circuit board and manufacturing method thereof SAMSUNG ELECTRO-MECHANICS CO., LTD. (KR) 2010-06-24 US claimed
US-20030130148-A1 Cleaning solution for removing photoresist HYNIX SEMICONDUCTOR INC. (KR) 2003-07-10 US claimed
CN-118179482-A Vanadium-based catalyst for plasma synergistic catalytic denitration and preparation method and application thereof 北京化工大学 2024-06-14 CN disclosed
US-11879181-B2 Electroplating solution of tin or tin alloy with improved thickness variation of wafer bumps HOJIN PLATECH CO., LTD. (KR) 2024-01-23 US disclosed
CN-117062949-A Treatment agent for synthetic fibers, treatment agent 1 for fibers, treatment agent 2 for fibers, aqueous liquid of treatment agent for synthetic fibers, treatment method for fibers, and fibers 竹本油脂株式会社 2023-11-14 CN disclosed
CN-116917566-A Treating agent for synthetic fibers and synthetic fibers 竹本油脂株式会社 2023-10-20 CN disclosed
CN-116791385-A Formula of high-strength plastic rope and production method thereof 界首市宏利塑料股份有限公司 2023-09-22 CN disclosed
CN-112501908-B Treating agent for synthetic fibers and synthetic fibers 竹本油脂株式会社 2023-07-21 CN disclosed
US-20230151504-A1 ELECTROPLATING SOLUTION OF TIN OR TIN ALLOY WITH IMPROVED THICKNESS VARIATION OF WAFER BUMPS HOJIN PLATECH CO., LTD. (KR) 2023-05-18 US disclosed
CN-112501907-B Treating agent for synthetic fiber and synthetic fiber 竹本油脂株式会社 2023-01-24 CN disclosed
US-20100155108-A1 Electroless nickel plating solution composition, flexible printed circuit board and manufacturing method thereof SAMSUNG ELECTRO-MECHANICS CO., LTD. (KR) 2010-06-24 US disclosed
US-7563753-B2 Cleaning solution for removing photoresist HYNIX SEMICONDUCTOR INC. (KR) 2009-07-21 US disclosed
US-20030130148-A1 Cleaning solution for removing photoresist HYNIX SEMICONDUCTOR INC. (KR) 2003-07-10 US disclosed
EP-0883163-A2 Method of forming micropatterns MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD (JP) 1998-12-09 EP disclosed
US-5741628-A CHEMICAL AMPLIFICATION WHICH GENERATES AN ACID IN RESPONSE TO LASER RADIATION MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 1998-04-21 US disclosed
US-5679500-A FORMING RESIST FILM BY USING A CHEMICAL AMPLIFICATION RESIST WHICH GENERATES AN ACID IN RESPONSE TO LASER LIGHT AND WHICH REACTS WITH THE ACID MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 1997-10-21 US disclosed
US-5658711-A FORMING RESIST FILM CONTAINING BASE GENERATOR, GENERATING BASE BY RADIATION, FORMING METAL OXIDE FILM, ETCHING MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 1997-08-19 US disclosed
EP-0691674-A2 Method of forming micropatterns MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 1996-01-10 EP disclosed