Fluoride Ion

Fluoride Ion

SCHEMBL1812697

CC[N+](C)(C)C.[F-]

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Fluoride Ion SCHEMBL8118406 0.95
SCHEMBL232317 0.94
Fluoride SCHEMBL28075991 0.91
Iodide SCHEMBL196407 0.89
Water SCHEMBL28331162 0.89 NFKB1 (0.42)
Bromide SCHEMBL3209609 0.89
Bromide SCHEMBL3209595 0.89 NFKB1 (0.42)
Hydrochloric Acid SCHEMBL370134 0.89
Water SCHEMBL187547 0.89
SCHEMBL7553746 0.89

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 53 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-120118223-A Method for adjusting particle size of fluorine-containing polymer emulsion 浙江蓝天环保高科技股份有限公司 2025-06-10 CN claimed
CN-120118250-A Surfactant, preparation method and application thereof 浙江蓝天环保高科技股份有限公司 2025-06-10 CN claimed
CN-120118232-A Preparation method and application of fluorine-containing polymer emulsion 浙江蓝天环保高科技股份有限公司 2025-06-10 CN claimed
CN-118056812-A Continuous preparation method of perfluoroisobutyronitrile 浙江省化工研究院有限公司 2024-05-21 CN claimed
CN-118056807-A Method for continuously preparing perfluorinated acyl fluoride compounds 浙江省化工研究院有限公司 2024-05-21 CN claimed
CN-112480928-A Silicon etching composition and etching method for silicon substrate by using same 利绅科技股份有限公司 2021-03-12 CN claimed
CN-105733587-B Etchant solution and method of use thereof 弗萨姆材料美国有限责任公司 2020-04-03 CN claimed
US-9873833-B2 Etchant solutions and method of use thereof VERSUM MATERIALS US, LLC (US) 2018-01-23 US claimed
EP-3040397-A1 ETCHANT SOLUTIONS AND METHOD OF USE THEREOF AIR PRODUCTS AND CHEMICALS, INC. (US) 2016-07-06 EP claimed
US-20160186058-A1 Etchant Solutions and Method of Use Thereof AIR PRODUCTS AND CHEMICALS, INC. (US) 2016-06-30 US claimed
US-7947637-B2 Cleaning formulation for removing residues on surfaces FUJIFILM ELECTRONIC MATERIALS, U.S.A., INC. (US) 2011-05-24 US claimed
EP-2041776-A2 CLEANING FORMULATION FOR REMOVING RESIDUES ON SURFACES FujiFilm Electronic Materials USA, Inc. (US) 2009-04-01 EP claimed
WO-2008005354-A2 CLEANING FORMULATION FOR REMOVING RESIDUES ON SURFACES FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) 2008-01-10 WO claimed
US-20080004197-A1 CLEANING FORMULATION FOR REMOVING RESIDUES ON SURFACES FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. 2008-01-03 US claimed
US-20260071095-A1 POLISHING COMPOSITION, POLISHING METHOD, AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE FUJIMI INCORPORATED (JP) 2026-03-12 US disclosed
US-20250320381-A1 POLISHING COMPOSITION, POLISHING METHOD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE FUJIMI INCORPORATED (JP) 2025-10-16 US disclosed
US-20250282977-A1 POLISHING COMPOSITION, POLISHING METHOD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE FUJIMI INCORPORATED (JP) 2025-09-11 US disclosed
US-6197733-B1 USED AFTER ASHING OF PHOTORESIST IN PRODUCTION OF SEMICONDUCTOR CIRCUIT PATTERN TOKUYAMA CORPORATION (JP) 2001-03-06 US disclosed
US-5516878-A CATALYTIC ESTER INTERCHANGE USING AN ALKALI METAL SALT OF AN ATE-COMPLEX OF A METAL SELECTED FROM SILICON, GERMANIUM, TIN, OR LEAD TEIJIN LIMITED (JP) 1996-05-14 US disclosed
EP-0667366-A2 Process for the production of aromatic polycarbonate TEIJIN LIMITED (JP) 1995-08-16 EP disclosed