Known targets — ChEMBL curated mechanism
GABRA1GABRA2GABRA3GABRA4GABRA5GABRA6GABRB1GABRB2GABRB3GABRDGABREGABRG1GABRG2GABRG3GABRPGABRQ
The experimentally established mechanism targets of Water. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Water SCHEMBL28331162 | 1.00 | NFKB1 (0.42) | — | |
| SCHEMBL232317 | 0.94 | — | — | |
| Water SCHEMBL2976736 | 0.89 | NFKB1 (0.42) | — | |
| Iodide SCHEMBL196407 | 0.89 | — | — | |
| Bromide SCHEMBL3209609 | 0.89 | — | — | |
| Fluoride Ion SCHEMBL1812697 | 0.89 | — | — | |
| SCHEMBL7553746 | 0.89 | — | — | |
| Hydrochloric Acid SCHEMBL370134 | 0.89 | — | — | |
| Bromide SCHEMBL3209595 | 0.89 | NFKB1 (0.42) | — | |
| Hydrochloric Acid SCHEMBL29203167 | 0.89 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Appears in 3694 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260150612-A1 | SURFACE CONDITIONING PROCESSES FOR SEMICONDUCTOR PROCESSING CHAMBER PARTS | APPLIED MATERIALS, INC (US) | 2026-05-28 | — | — | US | claimed |
| CN-122071421-A | Process for efficiently preparing acrylamide monomer by low-cost base catalytic pyrolysis | 深圳有为技术控股集团有限公司 | 2026-05-22 | — | — | CN | claimed |
| US-12630744-B2 | Polishing compositions and methods of use thereof | FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) | 2026-05-19 | — | — | US | claimed |
| US-12624317-B2 | Method of reducing defects on polished wafers | FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) | 2026-05-12 | — | — | US | claimed |
| US-12606916-B2 | Method for reducing or preventing corrosion or fouling caused by acidic compounds | KURITA WATER INDUSTRIES LTD. (JP) | 2026-04-21 | — | — | US | claimed |
| EP-3631045-B1 | CHEMICAL MECHANICAL POLISHING SLURRY FOR COBALT APPLICATIONS | FUJIFILM ELECTRONIC MAT USA INC (US) | 2026-02-18 | — | — | EP | claimed |
| US-20260042976-A1 | COMPOSITIONS AND METHODS OF USE THEREOF | FUJIFILM ELECTRONIC MAT USA INC (US) | 2026-02-12 | — | — | US | claimed |
| EP-4688987-A1 | POLISHING COMPOSITIONS AND METHODS OF USE THEREOF | FUJIFILM Electronic Materials U.S.A, Inc. (US) | 2026-02-11 | — | — | EP | claimed |
| US-20260015560-A1 | COMPOSITIONS FOR POST-CMP CLEANING OF MICROELECTRONIC DEVICES | ENTEGRIS INC (US) | 2026-01-15 | — | — | US | claimed |
| EP-3894512-B1 | COMPOSITION AND METHOD FOR SELECTIVELY ETCHING RUTHENIUM AND/OR COPPER | ENTEGRIS INC (US) | 2025-12-24 | — | — | EP | claimed |
| WO-2001040425-A2 | POST CHEMICAL-MECHANICAL PLANARIZATION (CMP) CLEANING COMPOSITION | ESC, INC. (US) | 2001-06-07 | — | — | WO | claimed |
| US-6194366-B1 | Post chemical-mechanical planarization (CMP) cleaning composition | ESC, INC. | 2001-02-27 | — | — | US | claimed |
| EP-1027415-A1 | CLEANING COMPOSITIONS AND METHODS FOR CLEANING RESIN AND POLYMERIC MATERIALS USED IN MANUFACTURE | Kyzen Corporation (US) | 2000-08-16 | — | — | EP | claimed |
| WO-1999016855-A1 | CLEANING COMPOSITIONS AND METHODS FOR CLEANING RESIN AND POLYMERIC MATERIALS USED IN MANUFACTURE | KYZEN CORPORATION (US) | 1999-04-08 | — | — | WO | claimed |
| US-5846695-A | Removing agent composition for a photoresist and process for producing a semiconductor integrated circuit | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 1998-12-08 | — | — | US | claimed |
| EP-0463423-B1 | Surface treating agent for aluminum line pattern substrate | MITSUBISHI GAS CHEMICAL CO (JP) | 1995-08-30 | — | — | EP | claimed |
| US-5174816-A | SURFACE TREATING AGENT FOR ALUMINUM LINE PATTERN SUBSTRATE | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 1992-12-29 | — | — | US | claimed |
| US-4521585-A | USING AMINE POLYMERIZATION CATALYST | EASTMAN KODAK COMPANY (US) | 1985-06-04 | — | — | US | claimed |
| US-4503216-A | Hydroxyl-terminated polyether-esters | EASTMAN KODAK COMPANY (US) | 1985-03-05 | — | — | US | claimed |
| US-3954650-A | Amine hardner compositions | UNION CARBIDE CORPORATION (US) | 1976-05-04 | — | — | US | claimed |