SCHEMBL18179329

SCHEMBL18179329

CC(C)(c1ccccc1)c1ccc(Oc2cccc(Oc3ccc4cc(C5(c6ccc7cc(Oc8cccc(Oc9ccc(C(C)(C)c%10ccccc%10)cc9)c8C#N)ccc7c6)c6ccccc6-c6ccccc65)ccc4c3)c2C#N)cc1

nearest known ligand 0.33

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
AR P10275 5/20 0.33
MEN1 O00255 2/20 0.33
KMT2A Q03164 2/20 0.33
NPC1 O15118 1/20 0.33
RAB9A P51151 1/20 0.33
ESR1 P03372 1/20 0.32
ESR2 Q92731 1/20 0.32
PDK2 Q15119 1/20 0.32
GAA P10253 2/20 0.32
RCE1 Q9Y256 1/20 0.32
HSD11B1 P28845 1/20 0.32
SMN1; SMN2 Q16637 2/20 0.31
KDM4E B2RXH2 1/20 0.31
MAPT P10636 1/20 0.31
MAOA P21397 1/20 0.31
POLB P06746 1/20 0.30
CYP1A2 P05177 1/20 0.30
CYP2C19 P33261 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18179357 0.92 SMN1; SMN2 (0.35) ARMEN1KMT2ANPC1RAB9A
SCHEMBL18179336 0.91 SMN1; SMN2 (0.34) ARMEN1KMT2ANPC1RAB9A
SCHEMBL15760413 0.86 ESR1 (0.34) ARMEN1KMT2AESR1ESR2
SCHEMBL13250809 0.84 MAPT (0.40) ARHSD11B1MAPT
SCHEMBL13250812 0.84 MAPT (0.43) ARMEN1KMT2AGAAHSD11B1
SCHEMBL14264198 0.84 MAPT (0.43) ARMEN1KMT2AGAAHSD11B1
SCHEMBL18179340 0.82 ESR1 (0.34) MEN1KMT2ANPC1RAB9AESR1
SCHEMBL18179343 0.82 MAPT (0.35) MEN1KMT2ANPC1RAB9AESR1
SCHEMBL18179356 0.82 GAA (0.33) ARMEN1KMT2ANPC1RAB9A
SCHEMBL18179354 0.82 GAA (0.33) ARMEN1KMT2ANPC1RAB9A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9958781-B2 Method for film formation, and pattern-forming method JSR CORPORATION (JP) 2018-05-01 US disclosed
US-9620378-B1 Composition for film formation, film, production method of patterned substrate, and compound JSR CORPORATION (JP) 2017-04-11 US disclosed
US-9620378-B1 Composition for film formation, film, production method of patterned substrate, and compound JSR CORPORATION (JP) 2017-04-11 US disclosed
US-20160314984-A1 METHOD FOR FILM FORMATION, AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2016-10-27 US disclosed
US-20160314984-A1 METHOD FOR FILM FORMATION, AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2016-10-27 US disclosed