Acrylic Acid Ethyl Ester

Acrylic Acid Ethyl Ester

SCHEMBL1822973

C=CC(=O)NC(C)(C)CS(=O)(=O)O.C=CC(=O)OCC.C=CC(=O)OCC(F)(F)F

nearest known ligand 0.33

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Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 2/20 0.33
CYP3A4 P08684 2/20 0.33
TP53 P04637 1/20 0.33
MAPK1 P28482 1/20 0.33
SMN1; SMN2 Q16637 1/20 0.33
HIF1A Q16665 1/20 0.33
CYP2C9 P11712 1/20 0.33
CYP2C19 P33261 1/20 0.33
THRB P10828 1/20 0.32
TSHR P16473 2/20 0.31
MEN1 O00255 1/20 0.31
KMT2A Q03164 1/20 0.31
HPGD P15428 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8373248 0.88
SCHEMBL1828174 0.85
Acrylic Acid Methyl Ester SCHEMBL8758796 0.79 ALDH1A1 (0.41) ALDH1A1CYP3A4CYP2C9CYP2C19TSHR
SCHEMBL19490 0.79 ALDH1A1 (0.47) ALDH1A1CYP3A4MAPK1CYP2C9CYP2C19
SCHEMBL28723020 0.79 ALDH1A1 (0.47) ALDH1A1CYP3A4MAPK1CYP2C9CYP2C19
Acrylic Acid Ethyl Ester SCHEMBL20588361 0.79 POLB (0.38) ALDH1A1CYP3A4TP53MAPK1SMN1; SMN2
SCHEMBL1825618 0.78 ALDH1A1 (0.31) ALDH1A1CYP3A4CYP2C9CYP2C19TSHR
SCHEMBL31388415 0.78 TSHR (0.50) ALDH1A1CYP3A4TP53MAPK1SMN1; SMN2
SCHEMBL7911836 0.78 ALDH1A1 (0.36) ALDH1A1CYP3A4SMN1; SMN2CYP2C9CYP2C19
SCHEMBL1839152 0.77 ALDH1A1 (0.33) ALDH1A1CYP3A4TP53MAPK1SMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1818723-B1 COMPOSITION FOR FORMING ANTIREFLECTION FILM, LAYERED PRODUCT, AND METHOD OF FORMING RESIST PATTERN JSR CORP (JP) 2011-05-04 EP disclosed
US-7709182-B2 Composition for forming antireflection film, layered product, and method of forming resist pattern JSR CORPORATION (JP) 2010-05-04 US disclosed
US-20080124524-A1 Composition For Forming Antireflection Film, Layered Product, And Method Of Forming Resist Pattern JSR CORPORATION (JP) 2008-05-29 US disclosed
EP-1818723-A1 COMPOSITION FOR FORMING ANTIREFLECTION FILM, LAYERED PRODUCT, AND METHOD OF FORMING RESIST PATTERN JSR Corporation (JP) 2007-08-15 EP disclosed