SCHEMBL184970

SCHEMBL184970

[c]1[c]c(-c2[c]cccc2)ccc1

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL115447 0.82 CYP3A4 (0.33)
SCHEMBL163399 0.73 ALDH1A1 (0.38)
SCHEMBL11973102 0.72
SCHEMBL14777412 0.71
SCHEMBL11972848 0.70 ALDH1A1 (0.41)
SCHEMBL2761711 0.69 MEN1 (0.32)
SCHEMBL339179 0.68 LMNA (0.36)
SCHEMBL183516 0.67 ALDH1A1 (0.35)
SCHEMBL41140 0.67 ALDH1A1 (0.42)
SCHEMBL38202 0.67 ALDH1A1 (0.42)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 109 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240122065-A1 METAL PATTERNING MATERIAL, AMINE COMPOUND, ELECTRONIC DEVICE, AND METHOD FOR FORMING METAL PATTERN TOSOH CORPORATION (JP) 2024-04-11 US claimed
EP-4198163-A1 METAL PATTERNING MATERIAL, AMINE COMPOUND, ELECTRONIC DEVICE, AND METHOD FOR FORMING METAL PATTERN Tosoh Corporation (JP) 2023-06-21 EP claimed
US-7456310-B2 Dispersant for dispersing carbon nanotubes and carbon nanotube composition comprising the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2008-11-25 US claimed
US-20070221094-A1 DISPERSANT FOR DISPERSING CARBON NANOTUBES AND CARBON NANOTUBE COMPOSITION COMPRISING THE SAME SAMSUNG ELECTRONICS CO., LTD. (KR) 2007-09-27 US claimed
US-12013636-B2 Salt, acid generator, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2024-06-18 US disclosed
US-20240122065-A1 METAL PATTERNING MATERIAL, AMINE COMPOUND, ELECTRONIC DEVICE, AND METHOD FOR FORMING METAL PATTERN TOSOH CORPORATION (JP) 2024-04-11 US disclosed
US-20240117101-A1 COMPOSITION FOR FILM FORMATION, RESIST COMPOSITION, RADIATION-SENSITIVE COMPOSITION, METHOD FOR PRODUCING AMORPHOUS FILM, RESIST PATTERN FORMATION METHOD, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, METHOD FOR PRODUCING UNDERLAYER FILM FOR LITHOGRAPHY, CIRCUIT PATTERN FORMATION METHOD, COMPOSITION FOR OPTICAL MEMBER FORMATION, RESIN FOR UNDERLAYER FILM FORMATION, RESIST RESIN, RADIATION-SENSITIVE RESIN, AND RESIN FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2024-04-11 US disclosed
US-20240117102-A1 POLYMER, COMPOSITION, METHOD FOR PRODUCING POLYMER, COMPOSITION FOR FILM FORMATION, RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, RADIATION-SENSITIVE COMPOSITION, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, METHOD FOR PRODUCING UNDERLAYER FILM FOR LITHOGRAPHY, CIRCUIT PATTERN FORMATION METHOD, AND COMPOSITION FOR OPTICAL MEMBER FORMATION MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2024-04-11 US disclosed
US-20240114778-A1 ORGANIC ELECTROLUMINESCENT COMPOUND, A PLURALITY OF HOST MATERIALS, AND ORGANIC ELECTROLUMINESCENT DEVICE COMPRISING THE SAME DUPONT SPECIALTY MATERIALS KOREA LTD. (KR) 2024-04-04 US disclosed
CN-117624071-A Organic electroluminescent compound, various host materials, and organic electroluminescent device comprising the same 罗门哈斯电子材料韩国有限公司 2024-03-01 CN disclosed
US-20230314942-A1 POLYCYCLIC POLYPHENOLIC RESIN, COMPOSITION, METHOD FOR PRODUCING POLYCYCLIC POLYPHENOLIC RESIN, COMPOSITION FOR FILM FORMATION, RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, RADIATION-SENSITIVE COMPOSITION, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, METHOD FOR PRODUCING UNDERLAYER FILM FOR LITHOGRAPHY, CIRCUIT PATTERN FORMATION METHOD, AND COMPOSITION FOR OPTICAL MEMBER FORMATION MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2023-10-05 US disclosed
US-20230296982-A1 POLYMER, COMPOSITION, METHOD FOR PRODUCING POLYMER, COMPOSITION, COMPOSITION FOR FILM FORMATION, RESIST COMPOSITION, RADIATION-SENSITIVE COMPOSITION, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, RESIST PATTERN FORMATION METHOD, METHOD FOR PRODUCING UNDERLAYER FILM FOR LITHOGRAPHY, CIRCUIT PATTERN FORMATION METHOD, AND COMPOSITION FOR OPTICAL MEMBER FORMATION MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2023-09-21 US disclosed
US-20030013774-A1 Ion exchange polymer dispersion and process for its production ASAHI GLASS COMPANY, LIMITED (JP) 2003-01-16 US disclosed
EP-1263074-A1 Ion exchange polymer dispersion and process for its production Asahi Glass Co., Ltd. (JP) 2002-12-04 EP disclosed
EP-0915865-B1 COVALENTLY IMMOBILISED FLUOROIONOPHORES FOR OPTICAL ION SENSORS NOVARTIS AG (CH) 2002-02-20 EP disclosed
US-6294390-B1 COMPOUND CONSISTING OF IONOPHORE, FLUOROPHORE, AND A FUNCTIONAL GROUP BOUND TOGETHER THROUGH A TRIVALENT ORGANIC RADICAL; SENSORS HAVING LONG USABLE LIFE AND A HIGH DEGREE OF SENSITIVITY NOVARTIS AG (CH) 2001-09-25 US disclosed
EP-0915865-A1 COVALENTLY IMMOBILISED FLUOROIONOPHORES FOR OPTICAL ION SENSORS Novartis AG (CH) 1999-05-19 EP disclosed
WO-1998003497-A1 COVALENTLY IMMOBILISED FLUOROIONOPHORES FOR OPTICAL ION SENSORS NOVARTIS AG (CH) 1998-01-29 WO disclosed
US-5081091-A For obtaining high molecular weight/narrow distribution addition homo- and copolymers by controlled bulk polymerization; silicon, germanium or tin organic compounds; cocatalysts IMPERIAL CHEMICAL INDUSTRIES PLC (GB) 1992-01-14 US disclosed
EP-0405787-A2 Catalysts IMPERIAL CHEMICAL INDUSTRIES PLC (GB) 1991-01-02 EP disclosed