SCHEMBL18535847

SCHEMBL18535847

CC(C)(C)Oc1cc(OC(C)(C)C)c(C(O)c2c(OC(C)(C)C)cc(OC(C)(C)C)cc2OC(C)(C)CCC(C)(C)Oc2cc(OC(C)(C)C)c(OC(C)(C)C)c(C(O)c3c(OC(C)(C)C)c(OC(C)(C)C)cc(OC(C)(C)C)c3OC(C)(C)C)c2OC(C)(C)C)c(OC(C)(C)C)c1

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18287900 0.82 — —
SCHEMBL18287906 0.82 KIF11 (0.33) —
SCHEMBL18639520 0.80 — —
SCHEMBL18539404 0.71 — —
SCHEMBL22839375 0.69 — —
SCHEMBL18287943 0.68 CNR2 (0.36) —
SCHEMBL18287901 0.63 — —
SCHEMBL18536056 0.62 TUBB4A (0.34) —
SCHEMBL31376345 0.62 ERBB2 (0.36) —
SCHEMBL18840679 0.61 KIF11 (0.37) —

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-3109703-B1 PHOTOSENSITIZATION CHEMICAL-AMPLIFICATION TYPE RESIST MATERIAL, AND METHOD FOR FORMING PATTERN USING SAME TOKYO ELECTRON LTD (JP) 2020-12-30 — — EP disclosed
US-10018911-B2 Chemically amplified resist material and resist pattern-forming method JSR CORPORATION (JP) 2018-07-10 — — US disclosed
US-20170131633-A1 CHEMICALLY AMPLIFIED RESIST MATERIAL AND RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2017-05-11 — — US disclosed
EP-3133444-A1 CHEMICALLY AMPLIFIED RESIST MATERIAL, PATTERN-FORMING METHOD, COMPOUND, AND PRODUCTION METHOD OF COMPOUND OSAKA UNIVERSITY (JP) 2017-02-22 — — EP disclosed
Send feedback