SCHEMBL18600587

SCHEMBL18600587

O=[N+]([O-])c1cc2ccccc2c2ccc3c4ccccc4c4ccccc4c3c12

nearest known ligand 0.62

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HPRT1 P00492 2/20 0.62
CASP6 P55212 1/20 0.57
TDP1 Q9NUW8 2/20 0.54
TSHR P16473 2/20 0.54
ALDH1A1 P00352 3/20 0.52
CYP3A4 P08684 1/20 0.52
CDK2 P24941 1/20 0.50
L3MBTL1 Q9Y468 2/20 0.45
MAPT P10636 1/20 0.45
CYP1A2 P05177 2/20 0.43
ERBB2 P04626 1/20 0.43
FYN P06241 1/20 0.43
MAOA P21397 1/20 0.43
ACHE P22303 1/20 0.43
AHR P35869 1/20 0.43
HNF4A P41235 2/20 0.41
CTSB P07858 2/20 0.41
PIM1 P11309 2/20 0.40
PIM3 Q86V86 2/20 0.40
MEN1 O00255 2/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL30496200 0.86 ALDH1A1 (0.61) HPRT1CASP6TDP1TSHRALDH1A1
SCHEMBL8622947 0.85 HPRT1 (0.76) HPRT1CASP6TDP1TSHRALDH1A1
SCHEMBL12014664 0.78 CYP1A2 (0.61) HPRT1CASP6TDP1TSHRALDH1A1
SCHEMBL28660711 0.78 HPRT1 (0.66) HPRT1CASP6TDP1TSHRALDH1A1
SCHEMBL30878647 0.76 HPRT1 (1.00) HPRT1CASP6TDP1TSHRALDH1A1
SCHEMBL29450700 0.76 HPRT1 (1.00) HPRT1CASP6TDP1TSHRALDH1A1
SCHEMBL710252 0.76 HPRT1 (1.00) HPRT1CASP6TDP1TSHRALDH1A1
SCHEMBL348055 0.75 HPRT1 (0.67) HPRT1CASP6TDP1TSHRALDH1A1
SCHEMBL27818709 0.75 ALDH1A1 (0.57) HPRT1CASP6TDP1TSHRALDH1A1
Charcoal, Activated SCHEMBL5052441 0.75 HPRT1 (0.96) HPRT1CASP6TDP1TSHRALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-3141957-B1 RESIST MATERIAL, RESIST COMPOSITION, AND RESIST PATTERN FORMATION METHOD MITSUBISHI GAS CHEMICAL CO (JP) 2021-03-24 EP disclosed
US-10437148-B2 Resist material, resist composition and method for forming resist pattern MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2019-10-08 US disclosed
US-10310377-B2 Material for forming film for lithography, composition for forming film for lithography, film for lithography, pattern forming method and purification method MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2019-06-04 US disclosed
EP-3141959-B1 LITHOGRAPHIC FILM FORMATION MATERIAL, COMPOSITION FOR LITHOGRAPHIC FILM FORMATION, LITHOGRAPHIC FILM, PATTERN FORMATION METHOD, AND PURIFICATION METHOD MITSUBISHI GAS CHEMICAL CO (JP) 2019-01-30 EP disclosed
US-20170145142-A1 RESIST MATERIAL, RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2017-05-25 US disclosed
US-20170144954-A1 MATERIAL FOR FORMING FILM FOR LITHOGRAPHY, COMPOSITION FOR FORMING FILM FOR LITHOGRAPHY, FILM FOR LITHOGRAPHY, PATTERN FORMING METHOD AND PURIFICATION METHOD MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2017-05-25 US disclosed
EP-3141959-A1 LITHOGRAPHIC FILM FORMATION MATERIAL, COMPOSITION FOR LITHOGRAPHIC FILM FORMATION, LITHOGRAPHIC FILM, PATTERN FORMATION METHOD, AND PURIFICATION METHOD Mitsubishi Gas Chemical Company, Inc. (JP) 2017-03-15 EP disclosed
EP-3141957-A1 RESIST MATERIAL, RESIST COMPOSITION, AND RESIST PATTERN FORMATION METHOD Mitsubishi Gas Chemical Company, Inc. (JP) 2017-03-15 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20170144954-A1 MATERIAL FOR FORMING FILM FOR LITHOGRAPHY, COMPOSITION FOR FORMING FILM FOR LITHOGRAPHY, FILM FOR LITHOGRAPHY, PATTERN FORMING METHOD AND PURIFICATION METHOD FRG1, MLLT3, FEM1B HPRT1 1266/4885CASP6 3449/4885TDP1 4253/4885
US-10310377-B2 Material for forming film for lithography, composition for forming film for lithography, film for lithography, pattern forming method and purification method FRG1, MLLT3, FEM1B HPRT1 1266/4885CASP6 3449/4885TDP1 4253/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.