Propylene Glycol

Propylene Glycol

SCHEMBL186272

CC(O)CO.CCOCC.COC(C)=O

nearest known ligand 0.43

Full drug profile on Sugi Atlas →

Known targets — ChEMBL curated mechanism

SLC5A2

The experimentally established mechanism targets of Propylene Glycol. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 4/20 0.43
TDP1 Q9NUW8 1/20 0.43
TSHR P16473 4/20 0.40
HSD17B10 Q99714 2/20 0.37
LMNA P02545 1/20 0.37
THRB P10828 1/20 0.31
MEN1 O00255 1/20 0.31
KMT2A Q03164 1/20 0.31
MGAM O43451 2/20 0.31
GAA P10253 2/20 0.31
SI P14410 2/20 0.31
MGAM2 Q2M2H8 2/20 0.31
TGFBR1 P36897 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Propylene Glycol SCHEMBL140963 1.00 ALDH1A1 (0.43) ALDH1A1TDP1TSHRHSD17B10LMNA
Propylene Glycol SCHEMBL5153420 0.89 ALDH1A1 (0.50) ALDH1A1TDP1TSHRHSD17B10LMNA
Propylene Glycol SCHEMBL24226 0.89 ALDH1A1 (0.56) ALDH1A1TDP1TSHRHSD17B10LMNA
Propylene Glycol SCHEMBL27714310 0.87 TDP1 (0.43) ALDH1A1TDP1TSHRHSD17B10MEN1
Propylene Glycol SCHEMBL28313165 0.87 TDP1 (0.43) ALDH1A1TDP1TSHRHSD17B10LMNA
Propylene Glycol SCHEMBL28710964 0.86 TDP1 (0.48) ALDH1A1TDP1TSHRHSD17B10LMNA
Propylene Glycol SCHEMBL151562 0.86 TDP1 (0.48) ALDH1A1TDP1TSHRHSD17B10LMNA
Propylene Glycol SCHEMBL14685915 0.86 ALDH1A1 (0.53) ALDH1A1TDP1TSHRHSD17B10LMNA
1,3-Butanediol SCHEMBL4324455 0.86 ALDH1A1 (0.39) ALDH1A1TSHRHSD17B10LMNA
Propylene Glycol SCHEMBL3820290 0.86 TDP1 (0.39) ALDH1A1TDP1TSHRHSD17B10LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Appears in 2202 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260098224-A1 PARAFFIN SUPPRESSANT COMPOSITIONS AND METHODS CHAMPIONX LLC (US) 2026-04-09 US claimed
CN-118955829-A Ethynyl-derived complexes, compositions comprising the same, methods of making coatings therefrom, and methods of making devices comprising the coatings 默克专利有限公司 2024-11-15 CN claimed
CN-114845746-B UV curable coatings for medical devices 生物涂层有限公司 2024-04-16 CN claimed
US-11914296-B2 Ethynyl derived composite, a composition comprising thereof, a method for manufacturing a coating by it, and a method for manufacturing a device comprising the coating MERCK PATENT GMBH (DE) 2024-02-27 US claimed
EP-3558917-B1 NOVEL COMPOUND, SEMICONDUCTOR MATERIAL, AND METHODS FOR MANUFACTURING COATING AND SEMICONDUCTOR USING THE SAME MERCK PATENT GMBH (DE) 2024-01-24 EP claimed
CN-117135973-A display panel 武汉华星光电半导体显示技术有限公司 2023-11-28 CN claimed
CN-114023796-B display panel 武汉华星光电半导体显示技术有限公司 2023-09-12 CN claimed
EP-4223416-A1 ELECTRODE CATALYST INK, ELECTRODE CATALYST, WATER ELECTROLYSIS CELL, AND WATER ELECTROLYSIS DEVICE Panasonic Intellectual Property Management Co., Ltd. (JP) 2023-08-09 EP claimed
US-20230227989-A1 ELECTRODE CATALYST INK, ELECTRODE CATALYST, WATER ELECTROLYSIS CELL, AND WATER ELECTROLYZER PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD. (JP) 2023-07-20 US claimed
CN-116375928-A Photosensitive resin composition and application thereof 艾森半导体材料(南通)有限公司 2023-07-04 CN claimed
US-6737215-B2 Photoresist composition for deep ultraviolet lithography CLARIANT FINANCE (BVI) LTD (VG) 2004-05-18 US claimed
US-20040048192-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2004-03-11 US claimed
EP-1388027-A1 PHOTORESIST COMPOSITION FOR DEEP ULTRAVIOLET LITHOGRAPHY CLARIANT INTERNATIONAL LTD. (CH) 2004-02-11 EP claimed
US-6682876-B2 Can selectively strip a photoresist coated on a backside and at an edge portion of a substrate SAMSUNG ELECTRONICS CO., LTD. (KR) 2004-01-27 US claimed
US-20030157441-A1 Thinner composition and method of stripping a photoresist using the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2003-08-21 US claimed
CN-1404136-A Method for increasing coating capability of low dielectric layer LIANHUA ELECTRONICS CO LTD (CN) 2003-03-19 CN claimed
US-20020187419-A1 Photoresist composition for deep ultraviolet lithography AZ ELECTRONIC MATERIALS USA CORP. 2002-12-12 US claimed
WO-2002093263-A1 PHOTORESIST COMPOSITION FOR DEEP ULTRAVIOLET LITHOGRAPHY CLARIANT INTERNATIONAL LTD (CH) 2002-11-21 WO claimed
CN-1222825-A Integrated manufacturing packaging process IBM (US) 1999-07-14 CN claimed
US-4692398-A Process of using photoresist treating composition containing a mixture of a hexa-alkyl disilazane, propylene glycol alkyl ether and propylene glycol alkyl ether acetate AMERICAN HOECHST CORPORATION (US) 1987-09-08 US claimed