SCHEMBL18643164

SCHEMBL18643164

Cc1cc(C(c2ccc(C(c3cc(C)c(O)c(I)c3)c3cc(I)c(O)c(I)c3)cc2)c2cc(I)c(O)c(I)c2)cc(I)c1O

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TTR P02766 3/20 0.41
PTGS1 P23219 4/20 0.38
PTGS2 P35354 3/20 0.38
TRPA1 O75762 1/20 0.36
CACNA1C Q13936 1/20 0.36
CA1 P00915 1/20 0.36
CA2 P00918 1/20 0.36
ALB P02768 1/20 0.34
LMNA P02545 3/20 0.32
HTT P42858 2/20 0.32
MEN1 O00255 2/20 0.32
KMT2A Q03164 2/20 0.32
ALDH1A1 P00352 2/20 0.31
ALOX5 P09917 2/20 0.31
GAA P10253 2/20 0.31
PKM P14618 1/20 0.31
G6PD P11413 1/20 0.31
L3MBTL1 Q9Y468 1/20 0.31
KDM4E B2RXH2 1/20 0.30
MAPT P10636 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18643629 1.00 TTR (0.41) TTRPTGS1PTGS2TRPA1CACNA1C
SCHEMBL23627377 0.91 TTR (0.44) TTRPTGS1PTGS2CA1CA2
SCHEMBL21774693 0.91 TTR (0.44) TTRPTGS1PTGS2CA1CA2
SCHEMBL18855331 0.91 TTR (0.48) TTRPTGS1PTGS2TRPA1CACNA1C
SCHEMBL1595123 0.87 CA1 (0.48) TTRPTGS1PTGS2TRPA1CACNA1C
SCHEMBL21241741 0.86 PTGS1 (0.41) TTRPTGS1PTGS2TRPA1CACNA1C
SCHEMBL26696424 0.85 ESR1 (0.44) TTRPTGS1CA1CA2ALB
SCHEMBL18855334 0.83 TTR (0.31) TTRPTGS1PTGS2
SCHEMBL21241774 0.81 PTGS1 (0.48) TTRPTGS1PTGS2TRPA1CACNA1C
SCHEMBL757737 0.81 ESR1 (0.44) PTGS1PTGS2TRPA1CACNA1CCA1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-3007004-B1 RESIST COMPOSITION MITSUBISHI GAS CHEMICAL CO (JP) 2019-04-17 EP disclosed
EP-2476662-B1 CYCLIC COMPOUND, PROCESS FOR PREPARATION THEREOF, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMATION OF RESIST PATTERN MITSUBISHI GAS CHEMICAL CO (JP) 2018-05-30 EP disclosed
EP-3285119-A1 RADIATION-SENSITIVE COMPOSITION Mitsubishi Gas Chemical Company, Inc. (JP) 2018-02-21 EP disclosed
WO-2017188452-A1 COMPOSITION FOR FORMING OPTICAL COMPONENT, AND CURED PRODUCT OF SAME 三菱瓦斯化学株式会社 2017-11-02 WO disclosed
WO-2017043561-A1 COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, METHOD FOR FORMING RESIST PATTERN, METHOD FOR PRODUCING AMORPHOUS FILM, MATERIAL FOR FORMING LITHOGRAPHIC UNDERLAYER FILM, COMPOSTION FOR FORMING LITHOGRAPHIC UNDERLAYER FILM, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD 三菱瓦斯化学株式会社 2017-03-16 WO disclosed