SCHEMBL18671982

SCHEMBL18671982

CCC(I)C(=O)Oc1c2ccccc2c(O)c2ccccc12

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 6/20 0.38
HPGD P15428 4/20 0.38
GAA P10253 3/20 0.38
KDM4E B2RXH2 7/20 0.36
HSD17B10 Q99714 5/20 0.36
MAPT P10636 3/20 0.36
TP53 P04637 1/20 0.36
HTT P42858 1/20 0.36
ADORA3 P0DMS8 1/20 0.35
CASP3 P42574 1/20 0.35
CASP7 P55210 1/20 0.35
CASP9 P55211 1/20 0.35
KMT2A Q03164 2/20 0.34
MEN1 O00255 1/20 0.34
LMNA P02545 1/20 0.34
MAPK10 P53779 1/20 0.34
POLB P06746 1/20 0.33
PKM P14618 1/20 0.33
RAB9A P51151 1/20 0.33
GALK1 P51570 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL19173251 0.91 GAA (0.42) ALDH1A1HPGDGAAKDM4EHSD17B10
SCHEMBL18671928 0.88 NTRK1 (0.36) ALDH1A1HPGDGAAKDM4EHSD17B10
SCHEMBL18671927 0.86 LMNA (0.36) ALDH1A1HPGDGAAKDM4EHSD17B10
SCHEMBL19222091 0.86 GAA (0.33) ALDH1A1HPGDGAAKDM4EHSD17B10
SCHEMBL18671921 0.83 KDM4E (0.39) ALDH1A1HPGDGAAKDM4EHSD17B10
SCHEMBL18671981 0.83 LCK (0.36) ALDH1A1GAAKDM4EHSD17B10MAPT
SCHEMBL8738725 0.83 ALDH1A1 (0.39) ALDH1A1HPGDGAAKDM4EHSD17B10
SCHEMBL20691750 0.80 KDM4E (0.40) ALDH1A1HPGDGAAKDM4EHSD17B10
SCHEMBL18671904 0.76 ESR1 (0.43) GAAHSD17B10MAPTKMT2AMEN1
SCHEMBL20691753 0.76 SLC6A2 (0.39) ALDH1A1HPGDGAAKDM4EHSD17B10

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9969829-B2 Polymer compound, negative resist composition, laminate, patterning process, and compound SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-05-15 US disclosed
US-RE46765-E1 Chemically amplified negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-27 US disclosed
US-9904172-B2 Shrink material and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-27 US disclosed
US-20170210836-A1 POLYMER COMPOUND, NEGATIVE RESIST COMPOSITION, LAMINATE, PATTERNING PROCESS, AND COMPOUND SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-07-27 US disclosed
US-9632417-B2 Shrink material and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-04-25 US disclosed
US-9604921-B2 Sulfonium salt, resist composition and resist pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-03-28 US disclosed