SCHEMBL18802898

SCHEMBL18802898

CCC(C)c1ccc(Oc2c(F)c(F)c(C)c(F)c2F)cc1

nearest known ligand 0.46

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ ALDH1A1 P00352 6/20 0.46
▸ TSHR P16473 1/20 0.46
▸ NPBWR1 P48145 1/20 0.43
▸ MCHR1 Q99705 1/20 0.43
▸ MEN1 O00255 2/20 0.40
▸ KMT2A Q03164 2/20 0.40
▸ TDP1 Q9NUW8 1/20 0.40
▸ GAA P10253 3/20 0.39
▸ MAPT P10636 2/20 0.39
▸ SLC7A5 Q01650 1/20 0.39
▸ NPC1 O15118 2/20 0.35
▸ RAB9A P51151 2/20 0.35
▸ HPGD P15428 2/20 0.35
▸ SMN1; SMN2 Q16637 1/20 0.35
▸ CASP1 P29466 1/20 0.34
▸ HSP90AA1 P07900 1/20 0.34
▸ L3MBTL1 Q9Y468 1/20 0.34
▸ POLB P06746 1/20 0.33
▸ ALOX12 P18054 1/20 0.33
▸ NPSR1 Q6W5P4 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL16591141 0.89 NPC1 (0.45) ALDH1A1TSHRNPBWR1MCHR1MEN1
SCHEMBL16591143 0.81 MEN1 (0.50) ALDH1A1TSHRMEN1KMT2ATDP1
SCHEMBL16081291 0.80 ALDH1A1 (0.47) ALDH1A1TSHRNPBWR1MCHR1MEN1
SCHEMBL18119964 0.80 ALDH1A1 (0.47) ALDH1A1TSHRNPBWR1MCHR1MEN1
SCHEMBL16683145 0.78 ALDH1A1 (0.45) ALDH1A1TSHRNPBWR1MCHR1MEN1
SCHEMBL12808430 0.78 ALDH1A1 (0.49) ALDH1A1TSHRNPBWR1MCHR1MEN1
SCHEMBL16591081 0.77 ALDH1A1 (0.42) ALDH1A1TSHRNPBWR1MCHR1MEN1
SCHEMBL4569587 0.75 TEAD4 (0.45) ALDH1A1TSHRNPBWR1MCHR1MEN1
SCHEMBL18119965 0.75 SLC7A5 (0.41) ALDH1A1TSHRMEN1KMT2ATDP1
SCHEMBL14424439 0.74 HSD17B10 (0.43) ALDH1A1MEN1KMT2ATDP1MAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1 patent. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20170121437-A1 PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, ELECTRONIC DEVICE, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM AND MASK BLANK FUJIFILM CORPORATION (JP) 2017-05-04 — — US disclosed
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