SCHEMBL18905463

SCHEMBL18905463

COC(C)c1ccc(CC[SiH3])cc1

nearest known ligand 0.35

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
FFAR1 O14842 1/20 0.35
IDO1 P14902 2/20 0.34
AKR1C2 P52895 1/20 0.33
AKR1C1 Q04828 1/20 0.33
MMP12 P39900 1/20 0.32
HTT P42858 1/20 0.32
SMN1; SMN2 Q16637 1/20 0.32
L3MBTL1 Q9Y468 1/20 0.32
CYP2D6 P10635 2/20 0.32
CYP1A2 P05177 1/20 0.32
CYP2C19 P33261 1/20 0.32
TAAR1 Q96RJ0 1/20 0.31
ADRB2 P07550 2/20 0.31
LMNA P02545 1/20 0.31
HIF1A Q16665 1/20 0.31
AOC3 Q16853 1/20 0.31
GALR3 O60755 1/20 0.31
ADRB1 P08588 1/20 0.31
SLC6A2 P23975 1/20 0.31
SLC6A4 P31645 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18905266 0.83 AKR1C3 (0.39) AKR1C2SMN1; SMN2CYP1A2LMNAAOC3
SCHEMBL15115428 0.82 ACACB (0.41) FFAR1HTTSMN1; SMN2L3MBTL1
SCHEMBL18910992 0.82 ACACB (0.41) FFAR1HTTSMN1; SMN2L3MBTL1
SCHEMBL1050122 0.80 TAAR1 (0.53) SMN1; SMN2L3MBTL1CYP1A2CYP2C19TAAR1
SCHEMBL1338710 0.78 AKR1C2 (0.42) IDO1AKR1C2AKR1C1L3MBTL1ADRB2
SCHEMBL9069719 0.77 TDP1 (0.48) IDO1AKR1C2AKR1C1L3MBTL1TAAR1
SCHEMBL18905328 0.77 MMP12 (0.44) FFAR1AKR1C2MMP12L3MBTL1LMNA
SCHEMBL8750369 0.76 HTR2A (0.53) LMNAHIF1ASLC6A2SLC6A4SLC6A3
SCHEMBL8750498 0.76 HTR2A (0.53) LMNAHIF1ASLC6A2SLC6A4SLC6A3
SCHEMBL18905279 0.75 LMNA (0.40) AKR1C2L3MBTL1CYP2D6ADRB2LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1 patent. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20170154766-A1 SILICON-CONTAINING CONDENSATE, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDER LAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-06-01 US disclosed