Predicted protein targets (top 14)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | POLB | P06746 | 4/20 | 0.64 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.55 |
| ▸ | HPGD | P15428 | 1/20 | 0.55 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.52 |
| ▸ | MEN1 | O00255 | 1/20 | 0.52 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.52 |
| ▸ | SMN1; SMN2 | Q16637 | 3/20 | 0.49 |
| ▸ | KDM4E | B2RXH2 | 3/20 | 0.49 |
| ▸ | CASP6 | P55212 | 1/20 | 0.48 |
| ▸ | TSHR | P16473 | 1/20 | 0.44 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.43 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.43 |
| ▸ | NTSR1 | P30989 | 1/20 | 0.43 |
| ▸ | ATM | Q13315 | 1/20 | 0.43 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL24812553 | 0.94 | POLB (0.57) | POLBALDH1A1HPGDTDP1MEN1 | |
| SCHEMBL1899432 | 0.92 | POLB (0.54) | POLBALDH1A1HPGDTDP1MEN1 | |
| SCHEMBL7749496 | 0.81 | POLB (0.68) | POLBALDH1A1HPGDTDP1MEN1 | |
| SCHEMBL1900558 | 0.78 | POLB (0.40) | POLBALDH1A1HPGDTDP1MEN1 | |
| SCHEMBL24811758 | 0.78 | ALDH1A1 (0.41) | POLBALDH1A1HPGDTDP1MEN1 | |
| SCHEMBL9963794 | 0.77 | ALDH1A1 (0.43) | POLBALDH1A1HPGDTDP1MEN1 | |
| SCHEMBL13163221 | 0.76 | POLB (0.61) | POLBALDH1A1HPGDTDP1MEN1 | |
| SCHEMBL13163239 | 0.76 | POLB (0.61) | POLBALDH1A1HPGDTDP1MEN1 | |
| SCHEMBL13163208 | 0.75 | POLB (0.63) | POLBALDH1A1HPGDTDP1MEN1 | |
| SCHEMBL14177788 | 0.74 | POLB (0.62) | POLBALDH1A1HPGDTDP1MEN1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 26 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20080160449-A1 | Photoresist polymer having nano-smoothness and etching resistance, and resist composition | LION CORPORATION (JP) | 2008-07-03 | — | — | US | claimed |
| US-9927708-B2 | Pattern forming process and shrink agent | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-03-27 | — | — | US | disclosed |
| US-9927708-B2 | Pattern forming process and shrink agent | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-03-27 | — | — | US | disclosed |
| US-9658532-B2 | Pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-05-23 | — | — | US | disclosed |
| US-9658532-B2 | Pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-05-23 | — | — | US | disclosed |
| US-9632415-B2 | Pattern forming process and shrink agent | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-04-25 | — | — | US | disclosed |
| US-9632415-B2 | Pattern forming process and shrink agent | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-04-25 | — | — | US | disclosed |
| US-9618850-B2 | Pattern forming process and shrink agent | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-04-11 | — | — | US | disclosed |
| US-9618850-B2 | Pattern forming process and shrink agent | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-04-11 | — | — | US | disclosed |
| US-20170010537-A1 | PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-01-12 | — | — | US | disclosed |
| US-20160139512-A1 | PATTERN FORMING PROCESS AND SHRINK AGENT | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-05-19 | — | — | US | disclosed |
| US-20160124312-A1 | PATTERN FORMING PROCESS AND SHRINK AGENT | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-05-05 | — | — | US | disclosed |
| US-20160124313-A1 | PATTERN FORMING PROCESS AND SHRINK AGENT | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-05-05 | — | — | US | disclosed |
| US-20160124313-A1 | PATTERN FORMING PROCESS AND SHRINK AGENT | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-05-05 | — | — | US | disclosed |
| US-20160124312-A1 | PATTERN FORMING PROCESS AND SHRINK AGENT | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-05-05 | — | — | US | disclosed |
| US-20110198730-A1 | HYPERBRANCHED POLYMER SYNTHESIZING METHOD, HYPERBRANCHED POLYMER, RESIST COMPOSITION, SEMICONDUCTOR INTEGRATED CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION METHOD | LION CORPORATION | 2011-08-18 | — | — | US | disclosed |
| US-20110101503-A1 | HYPERBRANCHED POLYMER SYNTHESIZING METHOD, HYPERBRANCHED POLYMER, RESIST COMPOSITION, SEMICONDUCTOR INTEGRATED CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION METHOD | LION CORPORATION (JP) | 2011-05-05 | — | — | US | disclosed |
| US-20080160449-A1 | Photoresist polymer having nano-smoothness and etching resistance, and resist composition | LION CORPORATION (JP) | 2008-07-03 | — | — | US | disclosed |
| US-7306893-B2 | Intermediate layer contains a unsaturated polymer having a carboxylic acid group in the side chain, which has specific reaction between the support and the photosensitive layer to promot adhesion strength; improve printing durability, chemical resistance; laser recording, photothermography | FUJIFILM CORPORATION (JP) | 2007-12-11 | — | — | US | disclosed |
| US-7306893-B2 | Intermediate layer contains a unsaturated polymer having a carboxylic acid group in the side chain, which has specific reaction between the support and the photosensitive layer to promot adhesion strength; improve printing durability, chemical resistance; laser recording, photothermography | FUJIFILM CORPORATION (JP) | 2007-12-11 | — | — | US | disclosed |