SCHEMBL1900558

SCHEMBL1900558

C=Cc1ccc(C(=O)OC2CCOC(=O)C2)cc1

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
POLB P06746 2/20 0.40
SCN1A P35498 2/20 0.35
SCN2A Q99250 2/20 0.35
SCN3A Q9NY46 2/20 0.35
ALDH1A1 P00352 1/20 0.35
HPGD P15428 1/20 0.35
PTPN1 P18031 3/20 0.35
PTPN2 P17706 2/20 0.35
PTPRF P10586 1/20 0.35
SMN1; SMN2 Q16637 2/20 0.34
NPC1 O15118 1/20 0.34
HTT P42858 1/20 0.34
RAB9A P51151 1/20 0.34
STS P08842 4/20 0.34
MAPT P10636 2/20 0.34
LMNA P02545 1/20 0.33
NPSR1 Q6W5P4 1/20 0.33
CHRNA7 P36544 1/20 0.33
PTPN6 P29350 1/20 0.33
PTPN11 Q06124 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1900169 0.86 PTPN1 (0.39) POLBSCN1ASCN2ASCN3APTPN1
SCHEMBL1899821 0.79 PTPN1 (0.40) POLBSCN1ASCN2ASCN3APTPN1
SCHEMBL1895801 0.78 POLB (0.64) POLBALDH1A1HPGDSMN1; SMN2MEN1
SCHEMBL27834872 0.77 STS (0.40) SCN1ASCN2ASCN3AALDH1A1PTPN1
SCHEMBL18288929 0.75 MAPT (0.44) SCN1ASCN2ASCN3APTPN1PTPN2
SCHEMBL1899139 0.74 CYP1A2 (0.33)
SCHEMBL1899432 0.74 POLB (0.54) POLBALDH1A1HPGDSMN1; SMN2MEN1
SCHEMBL24812553 0.73 POLB (0.57) POLBALDH1A1HPGDSMN1; SMN2MEN1
SCHEMBL1902969 0.73 TAS1R3 (0.36) POLBSCN1ASCN2ASCN3AALDH1A1
SCHEMBL471778 0.72 PTPN1 (0.38) SCN1ASCN2ASCN3APTPN1PTPN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20080160449-A1 Photoresist polymer having nano-smoothness and etching resistance, and resist composition LION CORPORATION (JP) 2008-07-03 US claimed
US-20110198730-A1 HYPERBRANCHED POLYMER SYNTHESIZING METHOD, HYPERBRANCHED POLYMER, RESIST COMPOSITION, SEMICONDUCTOR INTEGRATED CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION METHOD LION CORPORATION 2011-08-18 US disclosed
US-20110101503-A1 HYPERBRANCHED POLYMER SYNTHESIZING METHOD, HYPERBRANCHED POLYMER, RESIST COMPOSITION, SEMICONDUCTOR INTEGRATED CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION METHOD LION CORPORATION (JP) 2011-05-05 US disclosed
US-20080160449-A1 Photoresist polymer having nano-smoothness and etching resistance, and resist composition LION CORPORATION (JP) 2008-07-03 US disclosed