⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL28669843 | 0.82 | — | — | |
| SCHEMBL3760803 | 0.82 | — | — | |
| SCHEMBL427351 | 0.82 | — | — | |
| SCHEMBL430914 | 0.82 | — | — | |
| SCHEMBL714871 | 0.82 | — | — | |
| SCHEMBL23709 | 0.82 | — | — | |
| SCHEMBL428692 | 0.82 | — | — | |
| SCHEMBL267646 | 0.82 | — | — | |
| SCHEMBL267645 | 0.82 | — | — | |
| SCHEMBL28793381 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-110957266-A | Method for manufacturing integrated circuit | 台湾积体电路制造股份有限公司 | 2020-04-03 | — | — | CN | disclosed |
| EP-2189842-B1 | Reflective mask blank, reflective mask and methods of producing the mask blank and the mask | HOYA CORP (JP) | 2017-08-23 | — | — | EP | disclosed |
| EP-2317384-B1 | Reflective mask blank, reflective mask and methods of producing the mask blank and the mask | HOYA CORP (JP) | 2016-11-09 | — | — | EP | disclosed |
| EP-2317382-B1 | Reflective mask blank, reflective mask and methods of producing the mask blank and the mask | HOYA CORP (JP) | 2016-10-26 | — | — | EP | disclosed |
| EP-1498936-B1 | REFLECTION TYPE MASK BLANK AND REFLECTION TYPE MASK AND PRODUCTION METHODS FOR THEM | HOYA CORP (JP) | 2012-11-14 | — | — | EP | disclosed |
| US-7981573-B2 | Reflective mask blank, reflective mask and methods of producing the mask blank and the mask | HOYA CORPORATION (JP) | 2011-07-19 | — | — | US | disclosed |
| EP-2317382-A2 | Reflective mask blank, reflective mask and methods of producing the mask blank and the mask | Hoya Corporation (JP) | 2011-05-04 | — | — | EP | disclosed |
| EP-2317383-A2 | Reflective mask blank, reflective mask and methods of producing the mask blank and the mask | HOYA Corporation (JP) | 2011-05-04 | — | — | EP | disclosed |
| EP-2317384-A2 | Reflective mask blank, reflective mask and methods of producing the mask blank and the mask | Hoya Corporation (JP) | 2011-05-04 | — | — | EP | disclosed |
| EP-2189842-A2 | Reflective mask blank, reflective mask and methods of producing the mask blank and the mask | Hoya Corporation (JP) | 2010-05-26 | — | — | EP | disclosed |
| US-20080248409-A1 | Photoresists; extreme ultraviolet region and absorber layer for exposure light; semiconductors | HOYA CORPORATION | 2008-10-09 | — | — | US | disclosed |
| US-7390596-B2 | Reflective layer for reflecting exposure light in a short-wavelength region, absorber layer, and an upper layer of tantalum (Ta), boron (B), and nitrogen (N) | HOYA CORPORATION (JP) | 2008-06-24 | — | — | US | disclosed |
| US-20050208389-A1 | Reflective layer for reflecting exposure light in a short-wavelength region, absorber layer, and an upper layer of tantalum (Ta), boron (B), and nitrogen (N) | HOYA CORPORATION (JP) | 2005-09-22 | — | — | US | disclosed |
| EP-1498936-A1 | REFLECTION TYPE MASK BLANK AND REFLECTION TYPE MASK AND PRODUCTION METHODS FOR THEM | HOYA CORPORATION (JP) | 2005-01-19 | — | — | EP | disclosed |