SCHEMBL267645

SCHEMBL267645

[SiH4].[Ta]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL267646 1.00
SCHEMBL1896569 0.82
SCHEMBL6867041 0.82
SCHEMBL6867042 0.82
SCHEMBL2844495 0.82
SCHEMBL634297 0.82
SCHEMBL6421826 0.82
SCHEMBL634298 0.82
SCHEMBL716950 0.82
Hydrochloric Acid SCHEMBL9083519 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1056 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12176211-B2 Reflection mode photomask TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2024-12-24 US claimed
CN-118241069-B Hard alloy for mining tool with tantalum carbide dispersed and distributed and preparation method thereof 崇义章源钨业股份有限公司 2024-08-16 CN claimed
CN-113314523-B Semiconductor device and method of manufacturing the same 台湾积体电路制造股份有限公司 2024-07-16 CN claimed
US-11848368-B2 Transistors with different threshold voltages TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2023-12-19 US claimed
US-11830938-B2 Bipolar junction device TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2023-11-28 US claimed
US-20230369313-A1 ELECTROSTATIC DISCHARGE PREVENTION TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2023-11-16 US claimed
US-20230369466-A1 METHOD FOR FORMING SEMICONDUCTOR DEVICE TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2023-11-16 US claimed
US-20230360914-A1 REFLECTION MODE PHOTOMASK TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2023-11-09 US claimed
US-11735421-B2 Reflection mode photomask and method of making TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2023-08-22 US claimed
US-11721622-B2 Semiconductor devices SAMSUNG ELECTRONICS CO., LTD. (KR) 2023-08-08 US claimed
CN-1037723-C Method for manufacturing read-only memory by ion implantation technology MAOXI ELECTRONIC CO LTD TAIWAN (CN) 1998-03-11 CN claimed
CN-1166061-A Method for manufacturing thin film resistor GUOJU CO LTD (CN) 1997-11-26 CN claimed
CN-1120232-A Method for manufacturing read-only memory by ion implantation technology MAOXI ELECTRONIC CO LTD TAIWAN (CN) 1996-04-10 CN claimed
US-5341016-A Low resistance device element and interconnection structure MICRON SEMICONDUCTOR, INC. (US) 1994-08-23 US claimed
US-5110422-A METHOD FOR PRODUCING AN ADHERENT METAL DEPOSIT ON CARBON, AND MIRROR OBTAINED BY THIS METHOD OFFICE NATIONAL D'ETUDES ET DE RECHERCHES AEROSPATIALES (FR) 1992-05-05 US claimed
US-4708915-A Thermal head for thermal recording KYOCERA CORPORATION (JP) 1987-11-24 US claimed
EP-0244458-A1 HIGH VOLUME FRACTION REFRACTORY OXIDE, THERMAL SHOCK RESISTANT COATINGS. UNION CARBIDE CORP (US) 1987-11-11 EP claimed
WO-1987002389-A2 HIGH VOLUME FRACTION REFRACTORY OXIDE, THERMAL SHOCK RESISTANT COATINGS UNION CARBIDE CORPORATION (US) 1987-04-23 WO claimed
US-4593454-A Process for manufacturing an integrated circuit with tantalum silicide connections utilizing self-aligned oxidation Societe pour d'Etude et la Fabrication de Circuits Integres Speciaux EFCS (FR) 1986-06-10 US claimed
US-3944683-A Methods of producing chemically hardening coatings KAMAN SCIENCES CORPORATION (US) 1976-03-16 US claimed