SCHEMBL1899484

SCHEMBL1899484

C=Cc1ccccc1C(=O)OC(C)(C)OC

nearest known ligand 0.37

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CYP3A4 P08684 1/20 0.37
BACE1 P56817 1/20 0.35
TSHR P16473 4/20 0.35
LMNA P02545 2/20 0.35
TFEB P19484 1/20 0.35
NFE2L2 Q16236 1/20 0.35
ALDH1A1 P00352 4/20 0.34
CA1 P00915 2/20 0.34
CA2 P00918 2/20 0.34
CA9 Q16790 2/20 0.34
HSD17B10 Q99714 2/20 0.34
CFTR P13569 1/20 0.34
CA5A P35218 1/20 0.34
CA12 O43570 1/20 0.33
KDM4E B2RXH2 1/20 0.33
POLB P06746 1/20 0.33
ATM Q13315 1/20 0.33
MAOB P27338 2/20 0.33
MAPT P10636 1/20 0.33
NPSR1 Q6W5P4 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL347774 0.85 CYP3A4 (0.40) CYP3A4BACE1TSHRLMNAALDH1A1
SCHEMBL1898887 0.84 TSHR (0.40) CYP3A4BACE1TSHRLMNAALDH1A1
SCHEMBL28555504 0.80 CYP2C19 (0.41) CYP3A4TSHRALDH1A1HSD17B10MAPT
SCHEMBL61520 0.80 TSHR (0.55) BACE1TSHRLMNAALDH1A1CA1
SCHEMBL8840180 0.77 CYP3A4 (0.41) CYP3A4BACE1TSHRLMNATFEB
SCHEMBL14944464 0.77 ADRB2 (0.44) TSHRLMNAALDH1A1KDM4EMAPT
SCHEMBL27944998 0.76 TSHR (0.47) BACE1TSHRLMNAALDH1A1CA1
SCHEMBL1223272 0.76 CYP3A4 (0.46) CYP3A4BACE1TSHRLMNAALDH1A1
SCHEMBL4258990 0.76 SLC6A3 (0.51) BACE1TSHRLMNAALDH1A1CA1
SCHEMBL1899945 0.75 CYP3A4 (0.37) CYP3A4BACE1TSHRLMNAALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20080160449-A1 Photoresist polymer having nano-smoothness and etching resistance, and resist composition LION CORPORATION (JP) 2008-07-03 US claimed
US-20110198730-A1 HYPERBRANCHED POLYMER SYNTHESIZING METHOD, HYPERBRANCHED POLYMER, RESIST COMPOSITION, SEMICONDUCTOR INTEGRATED CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION METHOD LION CORPORATION 2011-08-18 US disclosed
US-20110101503-A1 HYPERBRANCHED POLYMER SYNTHESIZING METHOD, HYPERBRANCHED POLYMER, RESIST COMPOSITION, SEMICONDUCTOR INTEGRATED CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION METHOD LION CORPORATION (JP) 2011-05-05 US disclosed
US-20080160449-A1 Photoresist polymer having nano-smoothness and etching resistance, and resist composition LION CORPORATION (JP) 2008-07-03 US disclosed