SCHEMBL190682

SCHEMBL190682

CCCC1C2CC3CC(C2)CC1C3

nearest known ligand 0.41

Predicted protein targets (top 8)

geneUniProtsupporting neighboursconfidence
HSD11B1 P28845 1/20 0.41
L3MBTL1 Q9Y468 1/20 0.38
EPHX2 P34913 4/20 0.35
SIGMAR1 Q99720 1/20 0.35
CYP2C9 P11712 1/20 0.35
CXCR3 P49682 2/20 0.32
ALDH1A1 P00352 1/20 0.32
NPSR1 Q6W5P4 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL191696 0.84 HSD11B1 (0.38) HSD11B1L3MBTL1EPHX2SIGMAR1CYP2C9
SCHEMBL7099148 0.82 EPHX2 (0.41) HSD11B1L3MBTL1EPHX2SIGMAR1ALDH1A1
SCHEMBL27620612 0.80 EPHX2 (0.42) HSD11B1L3MBTL1EPHX2ALDH1A1NPSR1
SCHEMBL7712675 0.80 EPHX2 (0.42) HSD11B1L3MBTL1EPHX2ALDH1A1NPSR1
Methacrylic Acid SCHEMBL28236245 0.80 HSD11B1 (0.46) HSD11B1L3MBTL1EPHX2NPSR1
SCHEMBL39664 0.77 HSD11B1 (0.44) HSD11B1L3MBTL1EPHX2SIGMAR1CYP2C9
SCHEMBL6912960 0.74 HSD11B1 (0.42) HSD11B1L3MBTL1EPHX2CYP2C9CXCR3
SCHEMBL6657914 0.74 HSD11B1 (0.42) HSD11B1L3MBTL1EPHX2CYP2C9CXCR3
SCHEMBL19594418 0.72 HSD11B1 (0.41) HSD11B1SIGMAR1CYP2C9ALDH1A1
SCHEMBL2747594 0.72 HSD11B1 (0.46) HSD11B1EPHX2SIGMAR1CYP2C9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 207 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8722321-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-05-13 US claimed
US-20120276485-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-11-01 US claimed
US-20120270159-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-10-25 US claimed
EP-2287671-B1 Process for forming a coated substrate COMMW SCIENT IND RES ORG (AU) 2012-06-06 EP claimed
US-20100239982-A1 Photoresist composition with high etching resistance CHEIL INDUSTRIES, INC. (KR) 2010-09-23 US claimed
US-20100233620-A1 Copolymer and photoresist composition including the same CHEIL INDUSTRIES, INC. (KR) 2010-09-16 US claimed
US-7604918-B2 Photosensitive polymer and photoresist composition having the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2009-10-20 US claimed
WO-2009069848-A1 NOVEL COPOLYMERS AND PHOTORESIST COMPOSITION INCLUDING THE SAME CHEIL INDUSTRIES INC. (KR) 2009-06-04 WO claimed
WO-2009069847-A1 PHOTORESIST COMPOSITION WITH HIGH ETCHING RESISTANCE CHEIL INDUSTRIES INC. (KR) 2009-06-04 WO claimed
US-20070172760-A1 Photosensitive polymer and photoresist composition having the same SAMSUNG ELECTRONICS CO. LTD 2007-07-26 US claimed
US-6916543-B2 Copolymer, photoresist compositions thereof and deep UV bilayer system thereof ARCH SPECIALTY CHEMICALS, INC. (US) 2005-07-12 US claimed
US-6849378-B2 Photosensitive polymers, resist compositions comprising the same, and methods for forming photoresistive patterns SAMSUNG ELECTRONICS CO., LTD. (KR) 2005-02-01 US claimed
US-6833230-B2 Good adhesion and resistance to dry etching SAMSUNG ELECTRONICS CO., LTD. (KR) 2004-12-21 US claimed
US-6777162-B2 10-90 MOL % OF AN ALKYL VINYL ETHER MONOMER AND 10-90 MOL % OF ACRYLATE, METHACRYLATE, FUMARATE AND 4-HYDROXYSTYRENE DERIVATIVES SAMSUNG ELECTRONICS CO., LTD. (KR) 2004-08-17 US claimed
US-20040137362-A1 Novel copolymer, photoresist compositions thereof and deep UV bilayer system thereof ARCH SPECIALTY CHEMICALS, INC. 2004-07-15 US claimed
WO-2004040371-A2 NOVEL COPOLYMER AND PHOTORESIST COMPOSITIONS THEREOF ARCH SPECIALTY CHEMICALS, INC. (US) 2004-05-13 WO claimed
US-20030224289-A1 Photosensitive polymers and resist compositions containing the same SAMSUNG ELECTRONICS CO., LTD. 2003-12-04 US claimed
US-20030203306-A1 Photosensitive polymers, resist compositions comprising the same, and methods for forming photoresistive patterns SAMSUNG ELECTRONICS CO., LTD. (KR) 2003-10-30 US claimed
US-20030194643-A1 Photosensitive polymers containing adamantylalkyl vinyl ether, and resist compositions including the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2003-10-16 US claimed
US-20030091928-A1 Photosensitive polymer and photoresist composition thereof SAMSUNG ELECTRONICS, CO., LTD. (KR) 2003-05-15 US claimed