⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL11102160 | 0.84 | HSD11B1 (0.30) | — | |
| SCHEMBL12346153 | 0.82 | KDM4E (0.31) | — | |
| SCHEMBL15255691 | 0.79 | — | — | |
| SCHEMBL26991044 | 0.77 | — | — | |
| SCHEMBL25219744 | 0.76 | — | — | |
| SCHEMBL14265649 | 0.74 | LMNA (0.31) | — | |
| SCHEMBL2236435 | 0.71 | — | — | |
| SCHEMBL1809810 | 0.71 | L3MBTL1 (0.32) | — | |
| SCHEMBL18121623 | 0.70 | KDM4E (0.32) | — | |
| SCHEMBL21321028 | 0.70 | KDM4E (0.30) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230384683-A1 | PHOTORESIST WITH POLAR-ACID-LABILE-GROUP | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-11-30 | — | — | US | disclosed |
| US-20230384683-A1 | PHOTORESIST WITH POLAR-ACID-LABILE-GROUP | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-11-30 | — | — | US | disclosed |
| US-11822251-B2 | Photoresist with polar-acid-labile-group | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-11-21 | — | — | US | disclosed |
| US-11822251-B2 | Photoresist with polar-acid-labile-group | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-11-21 | — | — | US | disclosed |
| US-20170227852-A1 | Photoresist with Polar-Acid-Labile-Group | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2017-08-10 | — | — | US | disclosed |
| US-20170227852-A1 | Photoresist with Polar-Acid-Labile-Group | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2017-08-10 | — | — | US | disclosed |