Predicted protein targets (top 2)
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL18804157 | 0.82 | L3MBTL1 (0.33) | L3MBTL1 | |
| SCHEMBL196249 | 0.68 | L3MBTL1 (0.39) | L3MBTL1GAA | |
| SCHEMBL19912071 | 0.67 | — | — | |
| SCHEMBL725117 | 0.67 | TDP1 (0.54) | GAA | |
| SCHEMBL13884053 | 0.67 | L3MBTL1 (0.42) | L3MBTL1 | |
| SCHEMBL8402200 | 0.67 | L3MBTL1 (0.57) | L3MBTL1GAA | |
| SCHEMBL12748112 | 0.67 | L3MBTL1 (0.57) | L3MBTL1GAA | |
| SCHEMBL12316951 | 0.65 | GAA (0.48) | L3MBTL1GAA | |
| SCHEMBL16451550 | 0.65 | L3MBTL1 (0.55) | L3MBTL1GAA | |
| SCHEMBL14789790 | 0.65 | MGLL (0.48) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 168 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7008476-B2 | Modified alginic acid of alginic acid derivatives and thermosetting anti-reflective compositions thereof | AZ ELECTRONIC MATERIALS USA CORP. (US) | 2006-03-07 | — | — | US | claimed |
| WO-2004111092-A1 | MODIFIED ALGINIC ACID OR ALGINIC ACID DERIVATIVES AND THERMOSETTING ANTI-REFLECTIVE COMPOSITIONS THEREOF | AZ ELECTRONIC MATERIALS USA CORP. (US) | 2004-12-23 | — | — | WO | claimed |
| US-20040253532-A1 | Modified alginic acid of alginic acid derivatives and thermosetting anti-reflective compositions thereof | MERCK PATENT GMBH (DE) | 2004-12-16 | — | — | US | claimed |
| US-11822248-B2 | Coating compositions for use with an overcoated photoresist | ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) | 2023-11-21 | — | — | US | disclosed |
| US-11822248-B2 | Coating compositions for use with an overcoated photoresist | ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) | 2023-11-21 | — | — | US | disclosed |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-02-07 | — | — | US | disclosed |
| US-11243467-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2022-02-08 | — | — | US | disclosed |
| US-20200409261-A1 | COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, METHOD FOR PRODUCING AMORPHOUS FILM, UNDERLAYER FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2020-12-31 | — | — | US | disclosed |
| US-10816898-B2 | — | — | 2020-10-27 | — | — | US | disclosed |
| EP-2080750-B1 | RADIATION-SENSITIVE COMPOSITION | MITSUBISHI GAS CHEMICAL CO (JP) | 2020-07-29 | — | — | EP | disclosed |
| US-10444627-B2 | Pattern formation method, active light-sensitive or radiation-sensitive resin composition, resist film, production method for electronic device using same, and electronic device | FUJIFILM CORPORATION (JP) | 2019-10-15 | — | — | US | disclosed |
| US-7008476-B2 | Modified alginic acid of alginic acid derivatives and thermosetting anti-reflective compositions thereof | AZ ELECTRONIC MATERIALS USA CORP. (US) | 2006-03-07 | — | — | US | disclosed |
| WO-2005052016-A2 | BOTTOM ANTIREFLECTIVE COATINGS | AZ ELECTRONIC MATERIALS USA CORP. (DE) | 2005-06-09 | — | — | WO | disclosed |
| US-20050112494-A1 | Bottom antireflective coatings | AZ ELECTRONIC MATERIALS USA CORP. | 2005-05-26 | — | — | US | disclosed |
| WO-2004111092-A1 | MODIFIED ALGINIC ACID OR ALGINIC ACID DERIVATIVES AND THERMOSETTING ANTI-REFLECTIVE COMPOSITIONS THEREOF | AZ ELECTRONIC MATERIALS USA CORP. (US) | 2004-12-23 | — | — | WO | disclosed |
| US-20040253532-A1 | Modified alginic acid of alginic acid derivatives and thermosetting anti-reflective compositions thereof | MERCK PATENT GMBH (DE) | 2004-12-16 | — | — | US | disclosed |
| US-20030022095-A1 | Negative type radiation sensitive resin composition | JSR CORPORATION (JP) | 2003-01-30 | — | — | US | disclosed |
| US-6468714-B2 | FINE PHOTORESIST PATTERNS | JSR CORPORATION (JP) | 2002-10-22 | — | — | US | disclosed |
| US-20010006758-A1 | Negative radiation-sensitive resin composition | JSR CORPORATION (JP) | 2001-07-05 | — | — | US | disclosed |
| EP-1111465-A1 | Negative radiation-sensitive resin composition | JSR Corporation (JP) | 2001-06-27 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20200409261-A1 | COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, METHOD FOR PRODUCING AMORPHOUS FILM, UNDERLAYER FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD | C9, C1R, RAD51 | L3MBTL1 345/4885GAA 4720/4885 |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | L3MBTL1 293/4885GAA 4768/4885 |
| US-11243467-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | L3MBTL1 293/4885GAA 4768/4885 |
| US-10816898-B2 | — | C5, C9, H1-0 | L3MBTL1 770/4885GAA 4420/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.