⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1963946 | 0.89 | — | — | |
| SCHEMBL15213 | 0.87 | — | — | |
| SCHEMBL4812214 | 0.75 | — | — | |
| SCHEMBL36654 | 0.75 | — | — | |
| SCHEMBL19513938 | 0.75 | — | — | |
| SCHEMBL23039391 | 0.75 | — | — | |
| SCHEMBL562096 | 0.75 | — | — | |
| SCHEMBL1378714 | 0.75 | — | — | |
| SCHEMBL20768711 | 0.75 | — | — | |
| Ammonia Solution, Strong SCHEMBL25368540 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 57 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11942514-B2 | Semiconductor device | NANYA TECHNOLOGY CORPORATION (TW) | 2024-03-26 | — | — | US | claimed |
| US-11876094-B2 | Method for fabricating semiconductor device | NANYA TECHNOLOGY CORPORATION (TW) | 2024-01-16 | — | — | US | claimed |
| US-20230253210-A1 | SEMICONDUCTOR DEVICE WITH PROTECTION LAYER | NANYA TECHNOLOGY CORPORATION (TW) | 2023-08-10 | — | — | US | claimed |
| US-20230223440-A1 | SEMICONDUCTOR DEVICE | NANYA TECHNOLOGY CORPORATION (TW) | 2023-07-13 | — | — | US | claimed |
| US-11631738-B2 | Semiconductor device and method for fabricating the same | NANYA TECHNOLOGY CORPORATION (TW) | 2023-04-18 | — | — | US | claimed |
| US-11309387-B2 | Semiconductor device and method for fabricating the same | NANYA TECHNOLOGY CORPORATION (TW) | 2022-04-19 | — | — | US | claimed |
| US-20220085164-A1 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME | NANYA TECHNOLOGY CORPORATION (TW) | 2022-03-17 | — | — | US | claimed |
| US-20220077144-A1 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE | NANYA TECHNOLOGY CORPORATION (TW) | 2022-03-10 | — | — | US | claimed |
| US-20210134953-A1 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME | NANYA TECHNOLOGY CORPORATION (TW) | 2021-05-06 | — | — | US | claimed |
| US-20210118874-A1 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME | NANYA TECHNOLOGY CORPORATION (TW) | 2021-04-22 | — | — | US | claimed |
| US-20260040607-A1 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME | NANYA TECHNOLOGY CORP (TW) | 2026-02-05 | — | — | US | disclosed |
| CN-113410290-B | Semiconductor element and method for manufacturing the same | 南亚科技股份有限公司 | 2024-12-27 | — | — | CN | disclosed |
| US-12112950-B2 | Semiconductor device with protection layer and method for fabricating the same | NANYA TECHNOLOGY CORPORATION (TW) | 2024-10-08 | — | — | US | disclosed |
| CN-118315267-A | Methods and systems for forming structures including threshold voltage tuning layers | ASM IP私人控股有限公司 | 2024-07-09 | — | — | CN | disclosed |
| CN-112768448-B | Semiconductor element and method for manufacturing the same | 南亚科技股份有限公司 | 2024-05-28 | — | — | CN | disclosed |
| US-20110176657-A1 | SINGLE CRYSTAL SCINTILLATOR MATERIAL, METHOD FOR PRODUCING SAME, RADIATION DETECTOR AND PET SYSTEM | HITACHI METALS, LTD. (JP) | 2011-07-21 | — | — | US | disclosed |
| EP-2336398-A1 | SINGLE CRYSTAL SCINTILLATOR MATERIAL, METHOD FOR PRODUCING SAME, RADIATION DETECTOR AND PET SYSTEM | Hitachi Metals, Ltd. (JP) | 2011-06-22 | — | — | EP | disclosed |
| US-20100207029-A1 | SINGLE CRYSTAL SCINTILLATOR MATERIAL AND METHOD FOR PRODUCING THE SAME | HITACHI METALS, LTD. (JP) | 2010-08-19 | — | — | US | disclosed |
| EP-2175008-A1 | SINGLE CRYSTAL SCINTILLATOR MATERIAL AND METHOD FOR PRODUCING THE SAME | Hitachi Metals, Ltd. (JP) | 2010-04-14 | — | — | EP | disclosed |
| JP-2004051451-A | ANISOTROPIC POROUS SILICON NITRIDE-BASED CERAMIC AND METHOD FOR SINTERING/FORMING/MACHINING THE SAME | NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY | 2004-02-19 | — | — | JP | disclosed |