Predicted protein targets (top 8)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.45 |
| ▸ | GAA | P10253 | 2/20 | 0.35 |
| ▸ | TP53 | P04637 | 1/20 | 0.34 |
| ▸ | ADRA2C | P18825 | 1/20 | 0.31 |
| ▸ | F2 | P00734 | 1/20 | 0.31 |
| ▸ | ELANE | P08246 | 1/20 | 0.31 |
| ▸ | CTSG | P08311 | 1/20 | 0.31 |
| ▸ | CTRC | Q99895 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL16451550 | 0.94 | L3MBTL1 (0.55) | L3MBTL1GAATP53F2ELANE | |
| SCHEMBL12024038 | 0.92 | L3MBTL1 (0.39) | L3MBTL1GAATP53 | |
| SCHEMBL18804142 | 0.89 | L3MBTL1 (0.41) | L3MBTL1GAATP53 | |
| SCHEMBL11308698 | 0.89 | L3MBTL1 (0.41) | L3MBTL1GAATP53ADRA2C | |
| SCHEMBL19421989 | 0.85 | L3MBTL1 (0.35) | L3MBTL1GAATP53 | |
| SCHEMBL17190789 | 0.84 | L3MBTL1 (0.38) | L3MBTL1 | |
| SCHEMBL24298472 | 0.82 | TP53 (0.40) | L3MBTL1GAATP53 | |
| SCHEMBL21242821 | 0.82 | TP53 (0.40) | L3MBTL1GAATP53 | |
| SCHEMBL196871 | 0.82 | L3MBTL1 (0.42) | L3MBTL1GAATP53 | |
| SCHEMBL11373410 | 0.82 | L3MBTL1 (0.38) | L3MBTL1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 195 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7008476-B2 | Modified alginic acid of alginic acid derivatives and thermosetting anti-reflective compositions thereof | AZ ELECTRONIC MATERIALS USA CORP. (US) | 2006-03-07 | — | — | US | claimed |
| US-20040253532-A1 | Modified alginic acid of alginic acid derivatives and thermosetting anti-reflective compositions thereof | MERCK PATENT GMBH (DE) | 2004-12-16 | — | — | US | claimed |
| EP-3877459-B1 | POLYMER NETWORK FORMING SILANE COMPOSITIONS | MOMENTIVE PERFORMANCE MAT INC (US) | 2025-01-22 | — | — | EP | disclosed |
| US-11905428-B2 | Resin compositions and methods of production | MOMENTIVE PERFORMANCE MATERIALS INC. (US) | 2024-02-20 | — | — | US | disclosed |
| US-20230375932-A1 | RESIST COMPOUND AND UNDERLAYER COMPOUND FOR PHOTOLITHOGRAPHY, MULTILAYERED STRUCTURE FORMED USING THE SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES USING THE SAME | INHA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION (KR) | 2023-11-23 | — | — | US | disclosed |
| US-11822248-B2 | Coating compositions for use with an overcoated photoresist | ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) | 2023-11-21 | — | — | US | disclosed |
| US-11822248-B2 | Coating compositions for use with an overcoated photoresist | ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) | 2023-11-21 | — | — | US | disclosed |
| CN-113227228-B | Silane composition for forming polymer network | 迈图高新材料公司 | 2023-09-05 | — | — | CN | disclosed |
| US-20230213858-A1 | MANUFACTURING METHOD FOR CURED SUBSTANCE, MANUFACTURING METHOD FOR LAMINATE, AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE | FUJIFILM CORPORATION (JP) | 2023-07-06 | — | — | US | disclosed |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-02-07 | — | — | US | disclosed |
| US-20220145115-A1 | RESIN COMPOSITIONS AND METHODS OF PRODUCTION | MOMENTIVE PERFORMANCE MATERIALS INC. | 2022-05-12 | — | — | US | disclosed |
| WO-2004111092-A1 | MODIFIED ALGINIC ACID OR ALGINIC ACID DERIVATIVES AND THERMOSETTING ANTI-REFLECTIVE COMPOSITIONS THEREOF | AZ ELECTRONIC MATERIALS USA CORP. (US) | 2004-12-23 | — | — | WO | disclosed |
| US-20040253532-A1 | Modified alginic acid of alginic acid derivatives and thermosetting anti-reflective compositions thereof | MERCK PATENT GMBH (DE) | 2004-12-16 | — | — | US | disclosed |
| US-20030022095-A1 | Negative type radiation sensitive resin composition | JSR CORPORATION (JP) | 2003-01-30 | — | — | US | disclosed |
| US-6468714-B2 | FINE PHOTORESIST PATTERNS | JSR CORPORATION (JP) | 2002-10-22 | — | — | US | disclosed |
| US-6437052-B1 | Monomer having diol structure, polymer thereof, and negative photoresist composition and pattern forming method using the same | NEC CORPORATION (JP) | 2002-08-20 | — | — | US | disclosed |
| US-20020016431-A1 | Monomer having diol structure, polymer thereof, and negative photoresist composition and pattern forming method using the same background of the invention | NEC CORPORATION | 2002-02-07 | — | — | US | disclosed |
| US-20010006758-A1 | Negative radiation-sensitive resin composition | JSR CORPORATION (JP) | 2001-07-05 | — | — | US | disclosed |
| EP-1111465-A1 | Negative radiation-sensitive resin composition | JSR Corporation (JP) | 2001-06-27 | — | — | EP | disclosed |
| US-6074801-A | POLYMER WITH REPEATING UNITS, CROSSLINKING AND ADDING PHOTOACID GENERATOR WITH LIGHT | NEC CORPORATION (JP) | 2000-06-13 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | L3MBTL1 293/4885GAA 4768/4885TP53 3867/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.