SCHEMBL19678540

SCHEMBL19678540

O=C(OC1CCC(C(=O)Oc2c(F)c(F)c(C(=O)O)c(F)c2F)CC1)c1cc(I)cc(I)c1I

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27299441 0.87 — —
SCHEMBL19678513 0.81 POLB (0.34) —
SCHEMBL19678484 0.81 SERPINE1 (0.36) —
SCHEMBL19678533 0.78 POLB (0.33) —
SCHEMBL19678517 0.75 HDAC3 (0.33) —
SCHEMBL26807630 0.74 TSHR (0.32) —
SCHEMBL19683835 0.73 HDAC3 (0.32) —
SCHEMBL19678552 0.72 KMT2A (0.38) —
SCHEMBL19678542 0.72 HDAC3 (0.35) —
SCHEMBL19756170 0.71 — —

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11774853-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-10-03 — — US disclosed
US-11774853-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-10-03 — — US disclosed
US-20230273519-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD JSR CORPORATION (JP) 2023-08-31 — — US disclosed
US-20230273519-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD JSR CORPORATION (JP) 2023-08-31 — — US disclosed
US-20230161255-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-25 — — US disclosed
US-20230161255-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-25 — — US disclosed
US-20220299875-A1 RADIATION-SENSITIVE RESIN COMPOSITION, AND METHOD FOR FORMING PATTERN JSR CORPORATION (JP) 2022-09-22 — — US disclosed
US-11204553-B2 Chemically amplified resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-12-21 — — US disclosed
US-10809617-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-10-20 — — US disclosed
US-20200241418-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-07-30 — — US disclosed
US-20200192222-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-06-18 — — US disclosed
US-20200050104-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-02-13 — — US disclosed
US-20190155155-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-05-23 — — US disclosed
US-10295904-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-05-21 — — US disclosed
US-20170351177-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-12-07 — — US disclosed
US-20170351177-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-12-07 — — US disclosed
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